Investigation of single event effect in 28-nm system-on-chip with multi patterns  

作　　者：Wei-Tao Yang Yong-Hong Li Ya-Xin Guo Hao-Yu Zhao Yang Li Pei Li Chao-Hui He Gang Guo Jie Liu Sheng-Sheng Yang Heng An 杨卫涛;李永宏;郭亚鑫;赵浩昱;李洋;李培;贺朝会;郭刚;刘杰;杨生胜;安恒(School of Nuclear Science&Technology,Xi'an Jiaotong University,Xi'an 710049,China;National Innovation Center of Radiation Application,China Institute of Atomic Energy,Beijing 102413,China;Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China;Dipartimento di Automatica e Informatica,Politecnico di Torino,Torino 10129,Italy;Science and Technology on Vacuum Technology and Physics)

机构地区：[1]School of Nuclear Science&Technology,Xi'an Jiaotong University,Xi'an 710049,China [2]National Innovation Center of Radiation Application,China Institute of Atomic Energy,Beijing 102413,China [3]Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China [4]Dipartimento di Automatica e Informatica,Politecnico di Torino,Torino 10129,Italy [5]Science and Technology on Vacuum Technology and Physics Laboratory,Lanzhou Institute of Physics,Lanzhou 730000,China

出　　处：《Chinese Physics B》2020年第10期573-577,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.11575138,11835006,11690040,and 11690043);the Fund from Innovation Center of Radiation Application(Grant No.KFZC2019050321);the Fund from the Science and Technology on Vacuum Technology and Physics Laboratory,Lanzhou Institute of Physics(Grant No.ZWK1804);the Program of China Scholarships Council(Grant No.201906280343)。

摘　　要：Single event effects (SEEs) in a 28-nm system-on-chip (SoC) were assessed using heavy ion irradiations, and susceptibilities in different processor configurations with data accessing patterns were investigated. The patterns included the sole processor (SP) and asymmetric multiprocessing (AMP) patterns with static and dynamic data accessing. Single event upset (SEU) cross sections in static accessing can be more than twice as high as those of the dynamic accessing, and processor configuration pattern is not a critical factor for the SEU cross sections. Cross section interval of upset events was evaluated and the soft error rates in aerospace environment were predicted for the SoC. The tests also indicated that ultra-high linear energy transfer (LET) particle can cause exception currents in the 28-nm SoC, and some even are lower than the normal case.

关 键 词：SYSTEM-ON-CHIP heavy ion single event effect 

分 类 号：TN47[电子电信—微电子学与固体电子学]