基于电流纹波的SiC MOSFET逆变器死区消除方法  

A Dead-time Elimination Method Considering Current Ripple for SiC MOSFET Inverter

作　　者：党晓圆 李洁 于仁泽 李辉[2] DANG Xiao-yuan;LI Jie;YU Ren-ze;LI Hui(College of Mobile Telecommunication,Chongqing University of Posts and Telecom,Chongqing 401520,China;不详)

机构地区：[1]重庆邮电大学移通学院,重庆401520 [2]输配电装备及系统安全与新技术国家重点实验室,重庆大学,重庆400044

出　　处：《电力电子技术》2020年第10期50-52,63,共4页Power Electronics

基　　金：重庆市教委科学技术研究项目(KJ1722377,KJQN201902404,KJZD-K202002401)。

摘　　要：针对碳化硅(SiC)金属-氧化物半导体场效应晶体管(MOSFET)逆变器在高开关频率下死区效应严重的问题,提出一种基于电流纹波的死区消除策略。首先,分析了死区效应的产生原因;其次,介绍了非过零区与过零区的死区消除原则基础,通过实时计算电流纹波值,对过零区更新,提出基于电流纹波死区消除方法;最后,搭建了SiC MOSFET三相逆变器实验平台,验证了所提方法可明显提高基波电压百分比、有效降低电流中的谐波含量,且随着电压调制比的降低,所提方法仍能对死区效应起到很好的抑制效果,证明了方法的有效性。Aimed at solving the problem that dead-time effect exacerbates with the switching frequency in silicon carbide(SiC)metal-oxide-semiconductor field-effect transistor(MOSFET)power module,a dead-time elimination method is proposed by considering current ripple.Firstly,the cause of dead time effect is analyzed.Then,the dead-time elimination principle is introduced and the proposed method considering current ripple is illustrated in detail.Finally,a three-phase inverter platform composed of SiC MOSFET is built.Test results show that the proposed method can significantly increase the percentage of fundamental voltage and effectively reduce the current harmonic content.Besides,the output characteristics behaves well even under low modulation index,which proves the effectiveness of the method.

关 键 词：逆变器 死区消除 电流纹波 

分 类 号：TM464[电气工程—电器]