LTT硅胶保护层作用机理及性能影响因素研究  

Research on the Mechanism of Action and Performance Factors of Silicon Rubber Protective Layer for LTT

作　　者：武霁阳 刘宏 彭光强 国建宝 WU Ji-yang;LIU Hong;PENG Guang-qiang;GUO Jian-bao(Maintenance and Test Center of CSG EHV Power Transmission Company of China Southern Power Grid Co.,Ltd.,Guangzhou 510633,China;不详)

机构地区：[1]中国南方电网有限责任公司超高压输电公司检修试验中心,广东广州510633 [2]中电普瑞电力工程有限公司,北京102200

出　　处：《电力电子技术》2020年第10期133-136,共4页Power Electronics

摘　　要：对光控晶闸管(LTT)硅胶保护层的作用机理及性能影响因素进行了研究。硅胶作为LTT表面保护层,能显示出负电荷效应,对正角造型的LTT反向阻断能力有明显的改善作用。原材料、涂覆工艺、固化工艺等都对硅胶保护层性能有显著影响,此处通过试验方法获得了制备最佳性能硅胶保护层的工艺条件。The mechanism of action and performance factors of silicon rubber protective layer for light triggered thyristor(LTT)are researched.As a kind of protective material for LTT,silicon rubber showed a negative charge effect.It is good for the LTT’s reverse blocking ability of positive angle modeling.The properties of silicon rubber protective layer are affected by material,coating process and curing process of silicon rubber.The process conditions of preparing the best performance silicon rubber protective layer are obtained by the test method.

关 键 词：光控晶闸管 硅胶保护层 作用机理 性能影响因素 

分 类 号：TN3[电子电信—物理电子学]