二极管型近红外聚合物光电探测器研究进展  

Review of Near-Infrared Polymer Photodiodes

作　　者：肖建花 蒋亚东[1] 王洋[1] 黎威志[1] 太惠玲[1] XIAO Jianhua;JIANG Yadong;WANG Yang;LI Weizhi;TAI Huiling(University of Electronic Science and Technology of China,Chengdu 610054,China)

机构地区：[1]电子科技大学,四川成都610054

出　　处：《红外技术》2020年第10期917-926,共10页Infrared Technology

基　　金：国家自然科学优秀青年基金(61822106)。

摘　　要：近红外聚合物光电探测器的光电特性灵活可调、与柔性基板兼容性好、制备工艺简单且成本低,在航空、军事、工业、医疗等领域具有较大应用前景。近红外聚合物光电探测器的结构类型包括光电导体、光电二极管及光电晶体管,其中光电二极管的研究最为广泛。本文对近红外聚合物光电二极管(near-infrared polymer photodiodes,NIR PPD)的研究进展进行综述:首先,介绍了NIR PPD的光电转换原理;其次,分别从新材料合成和器件结构设计角度,详细讨论了在改善NIR PPD性能方面取得的重要进展;最后,总结全文并提出当前NIR PPD研究存在的挑战及其发展前景。Near-infrared(NIR)polymer photodetectors possess flexible and adjustable photoelectric characteristics,have good compatibility with flexible substrates,require a simple preparation process,and are inexpensive.They also have significant application prospects in aviation,military,industrial,and medical fields.NIR polymer photodetector structures include photoconductors,photodiodes,and phototransistors.This study reviews the research progress of NIR polymer photodiodes(NIR PPDs).First,the photoelectric conversion principle of NIR PPDs is introduced.Second,important advances made by researchers in improving the performance of NIR PPDs from the perspectives of new material development and device structure design are discussed.Finally,a summary is presented along with possible challenges and prospects of current research on NIR PPDs.

关 键 词：近红外光电探测器 光电二极管 聚合物 窄带隙材料 

分 类 号：TN362[电子电信—物理电子学]