从专利视角解读碳化硅基镓氮的竞争格局  

Analysis Competition Situation of GaN-on-SiC Technology from Global Patents

作　　者：赵雅飞 Zhao Yafei(National Patent Navigation Program(Enterprise)Research and Promotion Center,Beijing 100044,China)

机构地区：[1]国家专利导航项目(企业)研究和推广中心,北京100044

出　　处：《广东化工》2020年第18期112-114,共3页Guangdong Chemical Industry

摘　　要：碳化硅基镓氮技术多应用于高端射频器件,是各个国家争相攻克的尖端技术。本文基于全球相关专利数据,从专利申请趋势、技术来源、技术目标市场、技术流向、专利申请人等维度分析碳化硅基镓氮的竞争格局。为国内研发机构和企业的发展创新提供路径借鉴。GaN-on-SiC is widely used in RF devices.The technology is so important that every country intend to control.Based on global patent date,the paper analyses the competition situation of GaN-on-SiC,covering the aspects of global patent development trend,technology sources,target market,main applicants,and so on.Put forward some suggestions for the development of R&D institutions and enterprise in China.

关 键 词：碳化硅基镓氮 竞争格局 专利分析 

分 类 号：TQ[化学工程]