Antimony Selenide Thin Film Solar Cells with an Electron Transport Layer of Alq3  

作　　者：Wen-Jian Shi Ze-Ming Kan Chuan-Hui Cheng Wen-Hui Li Hang-Qi Song Meng Li Dong-Qi Yu Xiu-Yun Du Wei-Feng Liu Sheng-Ye Jin Shu-Lin Cong 师文建;阚泽明;程传辉;李文慧;宋航琪;李萌;于东麒;杜秀云;刘维峰;金盛烨;丛书林(School of Physics and Electronic Technology,Liaoning Normal University,Dalian 116029,China;School of Physics,Dalian University of Technology,Dalian 116024,China;Mechanical and Electrical Engineering College,Hainan University,Haikou 570228,China;State Key Laboratory of Molecular Reaction Dynamics,Dalian Institute of Chemical Physics,Chinese Academy of Sciences,Dalian 116023 China)

机构地区：[1]School of Physics and Electronic Technology,Liaoning Normal University,Dalian 116029,China [2]School of Physics,Dalian University of Technology,Dalian 116024,China [3]Mechanical and Electrical Engineering College,Hainan University,Haikou 570228,China [4]State Key Laboratory of Molecular Reaction Dynamics,Dalian Institute of Chemical Physics,Chinese Academy of Sciences,Dalian 116023 China

出　　处：《Chinese Physics Letters》2020年第10期125-130,共6页中国物理快报（英文版）

基　　金：Supported by the High Level Talents Project of Hainan Basic and Applied Research Program(Natural Science)(Grant No.2019RC118);the Open Fund of the State Key Laboratory of Molecular Reaction Dynamics in DICP(Grant No.SKLMRD-K202005).

摘　　要：We fabricated Sb 2 Se 3 thin film solar cells using tris(8-hydroxy-quinolinato)aluminum(Alq 3)as an electron transport layer by vacuum thermal evaporation.Another small organic molecule of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine(NPB)was used as a hole transport layer.We took ITO/NPB/Sb 2 Se 3/Alq 3/Al as the device architecture.An open circuit voltage(V o c)of 0.37 V,a short circuit current density(J s c)of 21.2 mA/cm 2,and a power conversion efficiency(PCE)of 3.79%were obtained on an optimized device.A maximum external quantum efficiency of 73%was achieved at 600 nm.The J s c,V o c,and PCE were dramatically enhanced after introducing an electron transport layer of Alq 3.The results suggest that the interface state density at Sb 2 Se 3/Al interface is decreased by inserting an Alq 3 layer,and the charge recombination loss in the device is suppressed.This work provides a new electron transport material for Sb 2 Se 3 thin film solar cells.

关 键 词：TRANSPORT SOLAR INTERFACE 

分 类 号：TM914.42[电气工程—电力电子与电力传动]