Ag负载KTa1-xNbxO3⁃BaTiO3颗粒掺杂P(VDF⁃TrFE⁃CTFE)复合材料的制备及介电性能  被引量:1

Preparation and Dielectric Properties of Ag⁃Loaded KTa1-xNbxO3⁃BaTiO3 Particle Doped P(VDF⁃TrFE⁃CTFE)Composite

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作  者:张钊[1] 沈达 熊晓英[1] 杨辉[1] 张启龙[1] 申乾宏[1] ZHANG Zhao;SHEN Da;XIONG Xiao-Ying;YANG Hui;ZHANG Qi-Long;SHEN Qian-Hong(State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China)

机构地区:[1]浙江大学材料科学与工程学院,硅材料重点实验室,杭州310027

出  处:《无机化学学报》2020年第11期2048-2054,共7页Chinese Journal of Inorganic Chemistry

基  金:国家自然科学基金(No.51772267)资助项目。

摘  要:通过光照还原法制备了银颗粒负载的铌钽酸钾-钛酸钡复合粉体(Ag/KTN⁃BT),并将其与聚偏氟乙烯-三氟乙烯-三氟氯乙烯(P(VDF⁃TrFE⁃CTFE))聚合物复合,获得Ag/KTN⁃BT聚合物基复合材料。研究发现,Ag/KTN⁃BT填料颗粒在聚合物基体中分散均匀,复合材料结构致密,无明显气孔和裂纹,且具有较好的柔韧性。银纳米颗粒的负载,一方面在复合材料中引入了额外的界面,导致界面极化作用增强,明显提高复合材料的介电常数;另一方面银纳米颗粒的量子尺寸效应和库伦阻塞效应使得复合材料保持较低的介电损耗。当填充体积分数为20%的Ag/KTN⁃BT颗粒时,聚合物基复合材料的介电常数大幅提升,从聚合物的37提升到125(100 Hz),介电损耗仅为0.12。与KTN⁃BT基复合材料对比,Ag/KTN⁃BT基复合材料也显示出较好的介电性能。An Ag⁃loaded KTa1-xNbxO3⁃BaTiO3 composite(Ag/KTN⁃BT)was prepared by light reduction method and then introduced into the P(VDF⁃TrFE⁃CTFE)matrix.The Ag/KTN⁃BT nanoparticles were uniformly dispersed in the polymer matrix without obvious pores and cracks,and the obtained nanocomposite film exhibited good flexibility.The introduction of Ag nanoparticles,on the one hand,introduces additional interfaces in the polymer matrix,lead⁃ing to enhanced interface polarization and the dielectric constant of the composite;on the other hand,due to the quantum size effect and coulomb blockage effect of the silver nanoparticles,the composite maintains low dielectric loss.Typically,the dielectric constant of the composite filled with 20%(volume fraction)Ag/KTN⁃BT reached 125 at 100 Hz,in contrast to 37 for pristine P(VDF⁃TrFE⁃CTFE)polymer.Moreover,the composite remained low dielec⁃tric loss 0.12.Compared with the KTN⁃BT⁃based composite,Ag/KTN⁃BT⁃based composites also showed better dielectric properties.

关 键 词: 聚合物基 复合材料 界面极化 介电性能 

分 类 号:TB33[一般工业技术—材料科学与工程] O614.122[理学—无机化学]

 

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