Si(111)Electrode/Electrolyte Interfacial Studied by in-situ Second Harmonic Generation  

原位二次谐波研究Si(111)电极/电解液界面

作　　者：Cai-he Liu Rui-peng Bai Yu Bai Yuan Guo Zhen Zhang 刘彩合;白锐朋;白羽;郭源;张贞(中国科学院化学研究所,中国科学院分子科学科教融合卓越中心,北京分子科学国家研究中心,分子反应动力学实验室,北京100190;中国科学院大学,北京100049)

机构地区：[1]Beijing National Laboratory of Molecular Sciences,State Key Laboratory of Molecular Reaction Dynamics,CAS Research/Education Center for Excellence in Molecular Sciences,Institute of Chemistry,Chinese Academy of Sciences,Beijing 100190,China [2]University of the Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Chinese Journal of Chemical Physics》2020年第5期554-560,I0078,共8页化学物理学报（英文）

基　　金：supported by the National Natural Science Foundation of China(No.21673251,No.21773258,No.21873104,and No.91856121);the Chinese Academy of Sciences(No.JKYYQ20180014)。

摘　　要：Si(111)electrode has been widely used in electrochemical and photoelectrochemical studies.The potential dependent measurements of the second harmonic generation(SHG)were performed to study Si(111)electrode interface.At different azimuthal angles of the Si(111)and under different polarization combinations,the curve of the intensity of SHG with extern potential has a different form of line or parabola.Quantitative analysis showed that these differences in the potential-dependence can be explained by the isotropic and anisotropic contribution of the Si(111)electrode.The change in the isotropic and anisotropic contribution of the Si(111)electrode may be attributed to the increase in the doping concentration of Si(111)electrodes.

关 键 词：Second harmonic generation Si(111)electrode/electrolyte Doping density 

分 类 号：O646[理学—物理化学]