基于大功率MOS管的D类功放设计  被引量:2

Design of Class D Power Amplifier Based on High Power MOS

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作  者:李文 LI Wen(Tianshui Huatian Technology Co.,Ltd.,Tianshui 741000,China)

机构地区:[1]天水华天科技股份有限公司,甘肃天水741000

出  处:《电子工业专用设备》2020年第5期64-69,共6页Equipment for Electronic Products Manufacturing

摘  要:通过对D类功放的各模块的分析,在设计目标下,给出了各模块的仿真结果,并给出了整体电路的仿真结果。结果表明,当提供电源电压为5 V,并且接一个阻值为8Ω的电阻负载时,整体电路的输出功率大于1.2 W,输出的电压波形无明显的失真,效率达到80%以上,符合设计的要求。Through the analysis of each module of Class D power amplifier,under the design goal,the simulation results of each module are given,and the simulation results of the overall circuit are given also.The results show that when the power supply voltage is provided as when 5V is connected to a resistive load with a resistance of 8Ω,the output power of the overall circuit is greater than 1.2W,and the output voltage waveform has no obvious distortion,and the efficiency reaches over 80%,which meets the requirements of the design.

关 键 词:D类放大器 效率 三角波 PWM调制 功率 

分 类 号:TN386.1[电子电信—物理电子学]

 

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