铁电存储器的故障模型和March C-1T1C测试  

Failure Model and March C-1T1C Testing of Ferroelectric Memory

作　　者：魏蓬博 WEI Pengbo(School of Mechanicl and Electrical Engineering,Xichang University,Xichang Sichuan 615013)

机构地区：[1]西昌学院机械与电气工程学院,四川西昌615013

出　　处：《河南科技》2020年第28期5-8,共4页Henan Science and Technology

摘　　要：铁电存储器读写时间短、功耗低、可重复擦除性好,因此,在航天航空、军事和公共交通等领域得到了越来越广泛的应用。一个晶体管和一个电容(1T1C)单元结构是常见的铁电存储器存储单元。本文对1T1C铁电存储阵列提出了几种基于电气缺陷的故障模型,包括晶体管常开、常关、开路和桥接故障。与现有的存储器故障相比,发现了两个新的故障,即写入故障(WDF)和动态写入故障(dWDF)。此外,还提出了一种改进的March C-1T1C测试,可以有效覆盖现有的故障和新发现的故障。Ferroelectric memory has gained more and more electric researchers'favor with the advantages of short time of reading and writing,low power consumption,and good repeatable erasability.A transistor and a capacitor(1T1C)cell structure are common ferroelectric memory cells.In this paper,we presented several fault models based on electrical defects for 1T1C ferroelectric memory arrays,such as transistor stuck-open and stuck-on faults.Two new faults,write fault(WDF)and dynamic write fault(dWDF)were found compared to existing memory faults.In ad⁃dition,an improved March C-1T1C test was also proposed to provide good coverage of both existing and newly discov⁃ered failures.

关 键 词：铁电存储器 存储故障 March C测试 HSPICE仿真 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]