ITO薄膜在LED中的光电性能研究  

Research on Photoelectric Properties of ITO Thin Films

作　　者：黄慧君 Huang Huijun(Xiamen Sanan Photoelectric Technology Co.,Ltd,Xiamen Fujian,361000)

机构地区：[1]厦门市三安光电科技有限公司,福建厦门361000

出　　处：《电子测试》2020年第20期87-89,13,共4页Electronic Test

摘　　要：目前,氧化铟锡(ITO)薄膜应用越来越广泛,在显示器、太阳能电池等高科技领域有着不可取代的地位。我国的铟资源储量丰富,且生产工艺趋于成熟。现关于氧化铟锡(ITO)薄膜的研究主要有以下几个方面:一是工艺研究,如镀膜工艺和掺杂工艺及组织结构,二是半导体光电性能及其机理方面的研究。本文将研究重点放在退火处理对ITO薄膜结构及性能的影响,主要通过退火处理过程中的退火温度、时间、退火通氧量以及不同的ITO厚度对薄膜的结构和光电性能的影响,试图探寻其中的影响规律,从而为ITO薄膜在光电器件中的实际应用提供理论基础和依据。At present,ITO film is more and more widely used,and it has an irreplaceable position in high-tech fields such as displays and solar cells.In addition,China is a large country in the storage and production of indium resources.The research on ITO film mainly focuses on the coating process,doping process and microstructure,semiconductor photoelectric performance and mechanism.Therefore,this thesis focuses on the effects of annealing and annealing temperature,annealing time on the structure and photoelectric properties of ITO films,and discusses the effects of substrate temperature and O2 flow control on the structure and photoelectric properties of ITO films under different atmospheres.The application in optoelectronic devices provides experimental basis and theoretical basis.

关 键 词：ITO薄膜 快速退火 光电性能 

分 类 号：TN312.8[电子电信—物理电子学]