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作 者:李琳 孙宇璇 孙伟峰[2] LI Lin;SUN Yuxuan;SUN Weifeng(Power Research Institute of Heilongjiang Electric Power Co.Ltd.,State Grid Corporation,Harbin,Heilongjiang 150040,China;Key Laboratory of Engineering Dielectrics and Its Application,Ministry of Education,Heilongjiang Provincial Key Laboratory of Dielectric Engineering,School of Electrical and Electronic Engineering,Harbin University of Science and Technology,Harbin,Heilongjiang 150080,China)
机构地区:[1]国网黑龙江省电力有限公司电力科学研究院,黑龙江哈尔滨150040 [2]哈尔滨理工大学电气与电子工程学院,工程电介质及其应用教育部重点实验室,黑龙江省电介质工程重点实验室,黑龙江哈尔滨150080
出 处:《计算物理》2020年第4期488-496,共9页Chinese Journal of Computational Physics
基 金:中国博士后科学基金(2013M531058);国网黑龙江省电力有限公司2018年综合计划(52243717000V)资助项目。
摘 要:基于密度泛函的第一原理赝势平面波方法,计算晶体结构、电子结构和光学性质,研究硫钒铜矿化合物Cu3VS4、Cu3NbS4和Cu3TaS4的电子输运及电致变色特性,探讨作为透明半导体材料应用于太阳能电池和电致变色器件的可能性.电子结构的计算表明这类化合物是间接带隙半导体,其电子能带的导带底和价带顶分别位于布里渊区的X点和R点.价带顶的电子本征态主要来自于Cu原子的d电子轨道,而导带底电子态主要来源于VB族元素原子的d电子轨道.能带结构、电荷布居分析、电子局域化函数和光吸收及反射谱的计算表明这些硫钒铜矿化合物属于极性共价半导体,具有较高的电荷迁移率和优良的电致变色特性,可应用于高效电致变色器件.With first-principles pseudo-potential plane-wave method,crystal structures,electronic structures and optical properties of sulvanite compounds:Cu3VS4,Cu3NbS4 and Cu3TaS4 are calculated to investigate their electrical conductivity and electrochromic performance.They are potentially applied in solar cells and electrochromic devices as transparent semiconductors.Electronic structures indicate that the secompounds are indirect band-gap semiconductors,with conduction band minimum and valence band maximum located at X and R points,respectively,in Brillouin zone.Electronic states of conduction band minimum and valence band maximum are dominated by d-orbitals of Cu andⅤ-group elements,respectively.From band structure,atomic charge population analysis,electron localization function and optical adsorption/reflectivity spectrum it is suggested that these sulvanite compounds are polar covalent semiconductors with high charge transport mobility and extraordinary electrochromic characteristics.They could be applied to electrochromic devices.
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