高边智能功率芯片的高精度电流检测电路  

High-precision current detection circuit of high-side smart power chip

作　　者：毕立强 蔡小五[2] 谭守标[1] 赵海涛[2] 方侃飞 BI Liqiang;CAI Xiaowu;TAN Shoubiao;ZHAO Haitao;FANG Kanfei(School of Electronics and Information Engineering,Anhui University,Hefei 230601,China;Silicon Device and Integrated Circuit R&D Center,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]安徽大学电子信息工程学院,安徽合肥230601 [2]中国科学院微电子研究所硅器件与集成电路研发中心,北京100029

出　　处：《安徽大学学报（自然科学版）》2020年第6期65-71,共7页Journal of Anhui University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(61874135)。

摘　　要：针对常用的高边智能功率芯片,提出一种基于VDMOS(vertical double-diffused MOS)分离元胞技术的高精度电流检测电路.该电路采用高增益、大带宽的折叠式运放,在满足响应速度的同时,增大环路增益以提高电流检测精度.比较电流信号后,输出检测信号的逻辑电平.电流信号的比较输出,降低了电路设计的复杂程度,减少了电压比较器及电阻的运用.电路基于0.25μm BCD(bipolar CMOS DMOS)工艺进行设计.仿真验证结果表明提出的高边智能功率芯片的电流检测电路具有较高的检测精度.Aiming at the commonly used high-side smart power chips,a high-precision current detection circuit based on VDMOS(vertical double-diffused MOS)separation cell technology was proposed.A high-gain,large-bandwidth OP-amp was used in this circuit.While satisfying the response speed,the loop gain was increased to improve the current detection accuracy.After comparing the current signals,the logic level of the detection signal was output.The comparison output of the current signal reduced the complexity of the circuit design and reduced the use of voltage comparators and resistors.The circuit was designed based on 0.25μm BCD(bipolar CMOS DMOS)process.Simulation verification results showed that the current detection circuit of the proposed high-side smart power chip had higher detection accuracy.

关 键 词：智能功率 电流检测 折叠式运放 高精度 

分 类 号：TN492[电子电信—微电子学与固体电子学]