n型叉指背接触太阳电池背面结构参数研究  

Research of the Back Side Structure Parameters of the n-Type Interdigitated Back Contact Solar Cell

作　　者：郭永刚 高嘉庆 屈小勇 吴翔 张博 宋标 Guo Yonggang;Gao Jiaqing;Qu Xiaoyong;Wu Xiang;Zhang Bo;Song Biao(SPIC Xi′an Solar Power Co.,Ltd.,Xi’an 710100,China)

机构地区：[1]国家电投集团西安太阳能电力有限公司,西安710100

出　　处：《微纳电子技术》2020年第11期865-870,共6页Micronanoelectronic Technology

摘　　要：利用Silvaco-TCAD半导体仿真软件模拟并分析了n型叉指背接触(IBC)太阳电池背面结构尺寸参数对电池短路电流密度、开路电压、填充因子及转换效率的影响,并进行实验验证。实验结果表明,当IBC太阳电池结构中相邻发射区宽度为1200μm、n型背表面场宽度为200μm、p型发射区宽度为1000μm时,IBC太阳电池小批量平均转换效率达到了23.74%,短路电流密度为42.36 mA/cm2,开路电压为698 mV,填充因子为80.33%。The Silvaco-TCAD semiconductor simulation software was used to simulate and analyze the influences of back side structure size parameters of the n-type interdigitated back contact(IBC)solar cell on short-circuit current density,open-circuit voltage,filling factor and conversion efficiency of the cell,and the experimental verification was carried out.The experimental results show that when the adjacent emitter width of the IBC solar cell structure is 1200μm,the width of the n-type back surface field is200μm,and the width of the p-type emitter is 1000μm,the small-batch average conversion efficiency of the IBC solar cell reaches 23.74%,the short-circuit current density is 42.36 mA/cm2,the open-circuit voltage is 698 mV,and the filling factor is 80.33%.

关 键 词：叉指背接触(IBC)太阳电池 背面结构尺寸 转换效率 填充因子 Silvaco-TCAD 

分 类 号：TM914.4[电气工程—电力电子与电力传动]