HCVD方法中生长温度和氨气流量对InN晶体结构和形貌的影响  

Effect of Growth Temperature and Ammonia Flow on the Crystal Structure and Morphology of InN Synthesized by HCVD

作　　者：张哲 于斌[1] 李天保[1,2] 余春燕[1,2] 贾伟[1,2] 郭俊杰[1,2] 许并社[1,2] ZHANG Zhe;YU Bin;LI Tianbao;YU Chunyan;JIA Wei;GUO Junjie;XU Bingshe(College of Materials Science and Engineering,Taiyuan University of Technology,Taiyuan 030024,China;Key Laboratory of Interface Science and Engineering in Advance Materials Ministry of Education,Taiyuan University of Technology,Taiyuan 030024,China)

机构地区：[1]太原理工大学材料科学与工程学院,太原030024 [2]太原理工大学太原理工大学新材料界面科学与工程教育部重点实验室,太原030024

出　　处：《太原理工大学学报》2020年第6期789-793,共5页Journal of Taiyuan University of Technology

基　　金：国家自然科学基金资助项目(51672185);山西省自然科学基金资助项目(201801D121101)。

摘　　要：实验以升华温度较低的三氯化铟(InCl3)为铟源,通过自制的卤化物化学气相沉积(HCVD)装置扩大了Ⅲ、Ⅴ族源共混生长区域,实现了InN在Si(111)衬底上的生长。探讨了生长温度与氨气流量对InN结构和形貌的影响。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和X射线能谱仪(EDS)对InN的晶体结构、形貌和元素组成进行表征。分析结果表明:固定NH3流量,随着生长温度的升高,InN形貌由分离的薄片状转变为交织的圆饼状,其中非极性(100)晶面取向性增强,晶体质量得到改善;保持生长温度恒定,增加氨气流量,InN形态由圆饼状转变为垂直的柱状,晶体取向从由非极性面(100)为主向极性(002)面为主的趋势转变。本实验研究对InN纳米材料的可控生长具有指导作用。InN materials were synthesized on Si(111)substrate by a self-made halide chemical vapor deposition(HCVD)device with expanded blended growth area of reaction source.Indium chloride(InCl3),which has a lower sublimation temperature,was used as the indium source.The effect of growth temperature and ammonia flow on the structure and morphology of InN was discussed.The changes in the crystal structure,morphology,and elemental composition of InN were investigated by X-ray diffraction(XRD),scanning electron microscopy(SEM),and X-ray energy spectroscopy(EDS),respectively.The results show that:when the NH3 flow is unchanged,the crystal morphology of InN is transformed from a dispersed flaky morphology into an intertwined coral-like morphology by increasing growth temperature,and the orientation of(100)plane is enhanced.Meanwhile,the crystal quality is improved.When the growth temperature keeps constant,the crystal morphology of InN is transformed from a coral-like morphology into a vertical columnar morphology by increasing ammonia gas flow,and the trend of crystal orientations changes from dominated non-polar(100)plane to overwhelming polar(002)plane.These research results are instructive for the controllable growth of InN nanomaterials.

关 键 词：INN INCL3 HCVD 取向 XRD 

分 类 号：TB321[一般工业技术—材料科学与工程]