Enhanced energy storage properties and temperature stability of fatigue-free La-modified PbZrO3 films under low electric fields  

低电场下耐疲劳La掺杂PbZrO3薄膜的储能特性及温度稳定性研究

作　　者：Xiaojun Qiao Wenping Geng Xi Chen Le Zhang Dongwan Zheng Liaoyuan Zhang Jian He Xiaojuan Hou Yun Yang Min Cui Kaiyang Zeng Xiujian Chou 乔骁骏;耿文平;陈茜;张乐;郑冬宛;张辽原;何剑;侯晓娟;杨云;崔敏;曾开阳;丑修建(Science and Technology on Electronic Test and Measurement Laboratory,School of Instrument and Electronics,North University of China,Taiyuan 030051,China;Department of Mechanical Engineering,National University of Singapore,Singapore 117576,Singapore)

机构地区：[1]Science and Technology on Electronic Test and Measurement Laboratory,School of Instrument and Electronics,North University of China,Taiyuan 030051,China [2]Department of Mechanical Engineering,National University of Singapore,Singapore 117576,Singapore

出　　处：《Science China Materials》2020年第11期2325-2334,共10页中国科学（材料科学（英文版）

基　　金：supported by the National Key R&D Program of China(2018YFE0115500);the National Natural Science Foundation of China(61704159 and 51975541);Shanxi Province Science Foundation for Youths(201701D221125 and 201801D221199);Program for the Young Academic Leaders of the North University of China(QX201807);the Research Project Supported By Shanxi Scholarship Council of China(2019-066);Shanxi“1331 Project”Key Subject Construction(1331 KSC)。

摘　　要：Electrostatic energy^-storage capacitors,with their ultrahigh storage density and high temperature stability,have been receiving increasing attention of late for their ability to meet the critical requirements of pulsed power devices in low^-consumption systems.In such a context,this work reports on the successful production of anti^-ferroelectric(AFE)thin films with excellent energy storage performance under a relatively low electric field.In particular,La^-doped Pb Zr O3 thin films were fabricated using a sol^-gel method,yielding a recoverable energy storage density of 34.87 J cm^-3 with an efficiency of 59.23%at room temperature under the electric field of^800 k V cm^-1.The temperature dependence of the energy storage property was demonstrated from room temperature to 210°C,indicating a stable density variation between 34.87 and 27.98 J cm^-3.The films also exhibited excellent anti^-fatigue property(endurance of up to 3×10^9cycles and the recoverable energy storage density varied from 39.78 to 29.32 J cm^-3 combined with an efficiency of 61.03%–44.95%under the test frequencies from 10 to 5000 Hz).All results were obtained using compact films with a high polarization(Pmax)of approximately 103.7μC cm^-2 and low remnant polarization(Pr^7μC cm^-2),which was owing to the combination of La Ni O3 buffer layers and vacancies at Pb sites.These results illustrate the great potential of pulsed power devices in low^-consumption systems operating in a wide range of temperatures and long^-term operations.为了满足恶劣环境下低功耗脉冲功率器件的需求,具有超高储能密度和温度稳定性的静电储能电容器受到广泛关注.本研究在较低的电场激励作用和极宽的温度范围内获得了高储能性能的反铁电薄膜.采用溶胶^-凝胶法制备了La掺杂的Pb Zr O3薄膜,在~800 k V cm^-1电场下,室温下可释放储能密度34.87 J cm^-3,储能效率为59.23%.此外,该储能特性具有优良的温度稳定性(210°C下储能密度为27.98 J cm^-3)、抗疲劳特性(3×10^9次循环后无明显疲劳)以及频率稳定性(储能密度:39.78–29.32 J cm^-3;储能效率:61.03%–44.95%)(测试频率10–5000 Hz,电场为~900 k V cm^-1).反铁电薄膜储能性能提升主要是由于La Ni O3缓冲层以及掺杂产生铅空位而引起的高极化值(Pmax约为103.7μC cm^-2)和较低的剩余极化(Pr^7μC cm^-2),为脉冲功率器件在低功耗系统中的应用奠定了研究基础.

关 键 词：ANTIFERROELECTRIC energy storage SOL-GEL Pb Zr O3thin film stability 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TM53[电气工程—电器]