栅极电阻对GaN MOSFET瞬态特性的影响研究  

Study on Influence of Gate Impedance on Transient Characteristics of GaN MOSFET

作　　者：蒋丽华[1] 罗霞 廖勇 罗海军[2] 龙兴明[2] JIANG Lihua;LUO Xia;LIAO Yong;LUO Haijun;LONG Xingming(Chongqing City Management College,Chongqing 401331,P.R.China;College of Physics and Electronic Engineering,Chongqing Normal University,Chongqing 401331,P.R.China)

机构地区：[1]重庆城市管理职业学院,重庆401331 [2]重庆师范大学物理与电子工程学院,重庆401331

出　　处：《微电子学》2020年第5期726-731,共6页Microelectronics

基　　金：重庆市自然科学基金面上项目(cstc2019jcyj-msxmX0490)。

摘　　要：为了研究栅极电阻对GaN MOSFET的开关速率和输出特性中出现振荡的影响,首先利用MOSFET的基本公式对其导通和关断时的输出瞬态电流进行了理论推导,然后通过实验平台测试GaN MOSFET的瞬态电流值,且与理论值对比,验证栅极电阻带来的影响。实验结果表明,GaN MOSFET的瞬态电流值实验值与理论值基本吻合,在导通和关断时,GaN MOSFET的输出瞬态电流和输出电流的高频震荡均随栅极电阻的增加而减小。栅极电阻从10Ω变化到100Ω时,导通时开关速率上升率占总开关速率上升率的84.7%,关断时开关速率下降率占总开关速率下降率的54.06%。在栅极电阻为10~100Ω范围内,GaN MOSFET具有较快的开关速度。In order to analyze the influence of gate impedance on the switching rate and output characteristics of GaN MOSFET,firstly,the output transient current of MOSFET was deduced theoretically by using the basic formula of MOSFET during turn-on and turn-off,and then the transient current value of GaN MOSFET was tested through the experimental platform,which compared with the theoretical value,so as to verify the influence of the gate impedance.The experimental results showed that the experimental value of the GaN MOSFET’s transient current value was basically consistent with the theoretical value.When turning on and turning off,the GaN MOSFET output transient current and high-frequency oscillation of output current decreased with the increase of grid resistance.The rising rate accounted for 84.7%of the total switch rising rate when turning on,and the falling rate accounted for 54.06%of the total switch falling rate when turning off.The GaN MOSFET had a fast switching speed within 10~100Ωgate impedance.

关 键 词：GaN MOSFET 栅极电阻 瞬态电流 

分 类 号：TN386.2[电子电信—物理电子学]