掺铈宽禁带ZnO薄膜的光学特性研究  

Study on Optical Properties of Ce-doped ZnOthin Films with Wide Bandgap

作　　者：薛红[1] XUE Hong(School of Physics and Electrical Engineering,Weinan Normal University,Weinan 714099,China)

机构地区：[1]渭南师范学院物理与电气工程学院,陕西渭南714099

出　　处：《渭南师范学院学报》2020年第11期82-86,共5页Journal of Weinan Normal University

基　　金：陕西省教育厅科研计划项目:碳纳米管的制备及其场发射性能的研究(16JK1277);渭南师范学院教育科学研究项目:师范专业认证背景下物理文化在中学物理教学中的渗透研究(2018JYKX003)。

摘　　要：采用射频磁控溅射镀膜技术制备样品,利用XRD和PL光谱技术对Ce掺杂ZnO材料的光学特性进行研究,分析稀土元素掺杂对ZnO晶体能带结构的影响。发现Ce掺杂使ZnO的晶格结构发生变化,随着掺杂量的增加,ZnO的发光强度增大;溅射源O 2的流量也会影响Ce掺杂ZnO对光的吸收和发光强度。Samples were prepared by RF magnetron sputtering,the optical properties of Ce-doped ZnOthin films were studied by XRD and PL spectroscopy,and the influence of rare-earth element doping on the band structure of ZnO crystal is analyzed.It is found that dopingCe changes the lattice structure of ZnO crystal and the luminescence intensity of ZnO increases with the increase of doping power;the flow rate of O 2 from RF magnetron sputtering source will affect the light absorption and luminescence intensity of Ce-doped ZnOthin films.

关 键 词：宽禁带半导体 掺杂 吸收光谱 发光光谱 

分 类 号：O432[机械工程—光学工程]