IGBT驱动电源研究  被引量:1

Research on IGBT Driver Power Supply

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作  者:孙超 江剑 谭惊涛 SUN Chao;JIANG Jian;TAN Jing-tao(Delta Electronics(Shanghai)Co.,Ltd.,Shanghai 201209,China)

机构地区:[1]台达电子企业管理(上海)有限公司,上海201209

出  处:《通信电源技术》2020年第15期1-5,共5页Telecom Power Technology

摘  要:选择合适的IGBT驱动电源是保障IGBT驱动可靠工作的关键。因此,阐述IGBT常用驱动电源变压器结构,总结其优缺点;介绍常用的驱动电源输出稳压方案,分析驱动变压器漏感及原副边寄生电容对三电平逆变器共模电流的影响;设计了两款1驱2变压器,介绍其设计过程,并进行了测试验证。The key to ensure the reliable operation of IGBT is to select the appropriate driving power supply for IGBT.This paper introduces the structure of IGBT common driving power transformer,and analyzes the advantages and disadvantages of them.In addition,the common output voltage stabilizing schemes of the driver power supply are introduced,and the influence of the leakage inductance of the drive transformer and the parasitic capacitance capacitances of the primary and secondary sides on the common mode current of the DNPC inverter are analyze.Finally,two 1-drive-2 transformer is designed,and the design process is introduced and verified by test.

关 键 词:IGBT驱动电源 原副边寄生电容 1驱2驱动变压器 

分 类 号:TM4[电气工程—电器]

 

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