拓扑绝缘体与Sinc函数型光子晶体分界面处Kerr效应和Faraday效应研究  

Kerr and Faraday Effects at Interface Between Topological Insulator and Sinc-Functional Photonic Crystal

作　　者：王筠 Wang Yun(College of Physics and Mechunical and Electrical Engineering,Hubei University of Education,Wuhan,Hubei 430205,China)

机构地区：[1]湖北第二师范学院物理与机电工程学院,湖北武汉430205

出　　处：《中国激光》2020年第10期118-124,共7页Chinese Journal of Lasers

摘　　要：应用传输矩阵法和等效介质理论,研究了拓扑绝缘体与Sinc函数型光子晶体分界面上的Kerr效应和Faraday效应,结果显示,在某些频率处,两种线极化波的反射波极化平面都可能会发生近似± π2的旋转,其附近周期结构的等效介电常数也有突变。进一步研究还发现,透射波极化面的旋转角随频率的变化规律与周期结构(BAB)n等效磁导率随频率的变化规律类似。以上结果都说明,在拓扑绝缘体与函数型光子晶体分界面上的Kerr效应和Faraday效应与入射波频率、周期结构的介电常数和磁导率等关系紧密。The Kerr and Faraday effects on the interface between a topological insulator and a Sinc-functional photonic crystal are studied by using the transfer matrix method and the equivalent medium theory. The results show that as for two kinds of linearly polarized waves, the polarization planes of their reflected waves may rotate approximately ± π2 at some frequencies. Meanwhile, the equivalent permittivity of the nearby periodic structure may change abruptly. The further investigation discloses that the law for the rotation angle of transmission wave's polarization plane versus frequency is similar to that for the equivalent permeability of a periodic structure (BAB)n versus frequency. All the above results show that the Kerr effect and Faraday effect on the interface between a topological insulator and a functional photonic crystal are closely related to the frequency of the incident wave, the dielectric constant and the permeability of a periodic structure.

关 键 词：材料 拓扑绝缘体 Sinc函数型光子晶体 KERR效应 Faraday效应 

分 类 号：O436[机械工程—光学工程]