干法刻蚀方面过孔截面的异常凸出机理研究与改善  

Elimination of Protruding O-Ring Girdle at Waist of Dry Etched Via:A Methodological Study

作　　者：崔立加 徐纯洁 查甫德 项龙飞 金鑫 刘杰 徐浩 赵双 Cui Lijia;Xu Chunjie;Zha Fude;Xiang Longfei;Jin Xin;Liu Jie;Xu Hao;Zhao Shuang(Hefei Xin Sheng Optoelectronics Technology Co.,Ld,Hefei 230000,China)

机构地区：[1]合肥鑫晟光电科技有限公司,合肥230000

出　　处：《真空科学与技术学报》2020年第9期838-842,共5页Chinese Journal of Vacuum Science and Technology

摘　　要：本文采用了鱼骨图,DOE田口设计的分析方法,使用电感耦合等离子体刻蚀设备对准备刻蚀PVX层过孔的有机膜型玻璃基板进行刻蚀,根据实验的结果,确定了发生的工序,通过对有机膜型玻璃基板过孔截面部位的异常凸出机理影响因素进行分析,改善工艺刻蚀条件中压力,等离子体轰击功率,刻蚀气体的比例流量参数,解决了有机膜型玻璃基板在过孔刻蚀截面的异常凸出问题。We experimentally addressed the problem that the protruding O-ring girdle defect formed at the waist of via,fabricated by inductively coupled plasma etching of the PVX-layer on glass substrate pre-covered with patterned organic film,for fabrication of thin film transistor liquid crystal display.The influence of the etching conditions,including the pressure,plasma energy,flow-rate of oxygen and ratio of SF6/O2 flow-rates,on formation of the protruding O-ring was investigated with scanning electron microscopy.The results show that the O2-plasma had a major impact.Specifically,the O2-plasma,forming in O2-rich atmosphere,turned the SiNx(in MultiGI and 1st-GI layers)into etch-resistant SiON and SiO2 layer,resulting in formation of the hard protruding,irregular etch-resistant O-ring girdle.We suggest that optimization of the SF6/O2 flow-rate ratio and partial pressure and concentration of O2 may be the total solution.

关 键 词：电感耦合等离子体刻蚀设备 有机膜型玻璃基板 过孔 异常凸出 

分 类 号：TN141.9[电子电信—物理电子学]