Si2O3粒径对传感器用L-MBE沉积Pt/ZnMgO/Si2O3导电性能和组织的影响  

Synthesis and Characterization of Pt/ZnMgO/SiO Coatings by Laser Molecular Beam Epitaxy Deposition

作　　者：韩训梅[1] 张奔 陈宾星 Han Xunmei;Zhang Ben;Chen Binxing(School of Mecharical and Electrical Engineering,Sanjiang Universisy,Nanjing 210012,China;School of Mechanical and Electrical Engineering,Hohai University,Changzhou 213022,China;College of Electronic Engineering,Zhejiang Indusrial Vocational and Technical Colege,Shaoxing 312000,China)

机构地区：[1]三江学院机械与电气工程学院,南京210012 [2]河海大学机电工程学院,常州213022 [3]浙江工业职业技术学院电子工程学院,绍兴312000

出　　处：《真空科学与技术学报》2020年第9期862-866,共5页Chinese Journal of Vacuum Science and Technology

基　　金：教育部产学合作协同育人项目(项目号:201801086041)。

摘　　要：为了提高高温下声表面传感器导电稳定性,采用激光分子束外延方(L-MBE)法沉积制备Pt/ZnMgO/Si2O3三层薄膜,通过实验测试的方式研究Si2O3粒径对其导电性能和结构的影响,重点研究了薄膜受到高温作用时发生的导电性变化及其微观组织结构的转变。研究结果表明:不同Si2O3粒径下Pt/ZnMgO/Si2O3三层薄膜电阻表现为和温度相近的变化规律,当温度上升后都发生了缓慢增大。当薄膜表面Si2O3粒径为60μm时,电阻发生明显变化的温度依次为1100℃与1150℃。粒径达到90μm以上的薄膜经过保温后电阻保持基本恒定。对200μm粒径Si2O3膜薄膜进行热处理形成了平整表面,生成了许多小尺寸晶粒。随着Si2O3粒径降低,表面区域产生了更大外径尺寸的Pt颗粒,形成了部分Pt微孔。提高Si2O3粒径后,形成强度较低的Pt(111)衍射峰,以及更大半峰宽。Pt(111)衍射峰峰半高宽随Si2O3粒径增加表现出降低变化。The surfaces of PGS piezoelectric crystal,a surface acoustic wave(SAW)sensor material,were modified with Pt/ZnMgO/Si2O3 tri-layered coatings,synthesized by laser molecular beam epitaxy(L-MBE)deposition.The influence of the Si2O3 particle-size on the microstructures and operation stability at^1000℃of SAW sensors was investigated with scanning electron microscopy and X-ray diffraction.The preliminary results show that the Si2O3 particle-size had a major impact.Specifically,as the Si2O3 particle-size increased to 60μm,the"rapid conductivity-decrease temperature"increased to 1150℃,450℃higher than that of the control sample;at sizes larger than 90μm,the decreased conductivity(at above 1000℃)remained roughly unchanged;the Pt grain-size decreased,because of the formation of voids and Si2O3-induced prevention of Pt-recrystallization and growth.Besides,the 200μm-Si2O3 particles resulted in a decrease of grain-size,an increase of voids/pores density and the improvements of flatness and compactness of Pt-layer.

关 键 词：Pt/ZnMgO/Si2O3三层薄膜 导电稳定性 Si2O3粒径 激光分子束外延 微观组织 

分 类 号：O4[理学—物理]