银/铜双原子MACE法制备单晶黑硅  

Preparation of monocrystalline black silicon by Ag and Cu dually assisted chemical etching

作　　者：黄燕华[1] 张子启 陈松岩[2] 张小英 HUANG Yan-hua;ZHANG Zi-qi;CHEN Song-yan;ZHANG Xiao-ying(Chengyi University College,Jimei University,Xiamen 361021,China;Fujian Provincial Key Laboratory of Semiconductors and Applications,Collaborative Innovation,Center for Optoelectronic Semiconductors and Efficient Devices,Department of Physics,Xiamen University,Xiamen 361005,China;School of Opto-electronic and Communication Engineering,Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices,Xiamen University of Technology,Xiamen 361024,China)

机构地区：[1]集美大学诚毅学院,福建厦门361021 [2]厦门大学物理系半导体光电材料及其高效转换器件协同创新中心,福建厦门361005 [3]厦门理工学院光电与通信工程学院,福建省光电技术与器件重点实验室,福建厦门361024

出　　处：《光电子．激光》2020年第9期987-993,共7页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金(61534005);福建省中青年教师教育科研项目(JAT191150);江西省自然科学基金(20192ACBL20048);福建省教育厅科技计划(JT180432)资助项目。

摘　　要：本文采用两步Ag/Cu双原子金属辅助化学腐蚀(MACE)法,在25℃和50℃单晶硅表面制备纳米陷光结构。实验探讨了刻蚀时间和Ag/Cu原子的摩尔比对制备的黑硅表面结构形貌和反射率的影响,实验得到Ag/Cu双原子MACE法制备的的黑硅比Ag单原子和Cu单原子MACE法制备的黑硅具有更好的表面抗反射。这是由于Ag/Cu双原子的协同催化腐蚀,使得黑硅表面具有较为均匀分布的横向和竖向共存的复合孔洞结构。研究结果表明,纵横交错的复合孔洞结构具有良好的陷光效果,当Ag/Cu原子摩尔比为1∶5,腐蚀时间为10 min时,黑硅表面的反射率达到最低,为4%以下。而对于重掺硅衬底,Ag/Cu双原子辅助腐蚀得到的黑硅表面孔洞为均匀规整的倒金字塔结构,其反射率达到2%以下。In this work,A novel two-step metal assisted chemical etching(MACE)method with Ag and Cu dual elements as catalysts at the temperature of 25℃and 50℃was introduced to prepare nano-structure on monocrystalline silicon.The effects of etching time and molar ratio of Ag/Cu on the surface morphology and reflectance of black silicon were systematically studied.It was found that the black silicon by Ag/Cu-assisted etching possessed lower surface reflectance compared with the black silicon by Ag-assisted or Cu-assisted etching.The black silicon has smoother surface and more complex structure with lateral and vertical holes by Ag/Cu-assisted etching compared with that by Ag or Cu-assisted etching method.The complex structure possessed a good light trapping effect.A minimum surface reflectance of lower than 4%in the wavelength range from 300 nm to 1000 nm was obtained when Ag/Cu molar ratio was 1/5 and etching time was 10 mins.While for the high doping silicon substrate,the holes on the surface of black silicon obtained by Ag/Cu-assisted etching were uniform and regular inverted pyramid structure,the reflectivity was less than 2%.

关 键 词：金属辅助化学腐蚀 银铜催化 黑硅 纳米结构 表面减反 

分 类 号：O649[理学—物理化学]