CaCu3Ti4-xZrxO12薄膜压敏及介电性能的研究  

Varistor and Dielectric Properties of CaCuTiZrO Thin Films Prepared by Sol-Gel Method

作　　者：郁倩 陶善仁 邓玉军 赵飞文 徐东 YU Qian;TAO Sanren;DENG Yujun;ZHAO Feiwen;XU Dong(College of Materials Science and Engineering,Jiangsu University,Zhenjiang 212000,China;College of Materials Science and Engineering,Anhui University of Technology,Maanshan 243000,China;Jiangsu Xingyuan Power Plant&Melallurglcal Equlpmenl Manuiacluring Co.,Ltd.,Jinjiang 214500,China)

机构地区：[1]江苏大学材料科学与工程学院,江苏镇江212000 [2]安徽工业大学材料科学与工程学院,安徽马鞍山243000 [3]江苏星源电站有限公司,江苏靖江214500

出　　处：《电瓷避雷器》2020年第5期33-37,共5页Insulators and Surge Arresters

基　　金：国家自然基金项目(编号:51572113);清华大学新型陶瓷与精细加工国家重点实验室项目(编号:KF201808)。

摘　　要：采用溶胶-凝胶法成功制备了梯度掺杂CaCu3Ti4-xZrxO12(x=0、0. 05、0. 10、0. 15、0. 20)薄膜。通过X射线衍射及扫描电镜对其相结构及显微组织进行分析;采用压敏电阻直流参数仪和精密阻抗分析仪对其压敏和介电性能进行研究。研究结果表明,Zr梯度掺杂不仅能显著降低CCTO薄膜的晶粒尺寸,而且提高其非线性系数。相比于下梯度掺杂,Zr上梯度掺杂CCTO薄膜综合电性能最好,其中非线性系数为α=8. 3,漏电流IL=102μA,压敏电压VT=7. 44 V/mm,介电损耗tanδ=0. 029。上梯度掺杂CCTO有利于电容-压敏双功能器件的开发和应用。The graded CaCu3Ti4-xO12( x = 0,0. 05,0. 10,0. 15 and 0. 20) thin films were prepared by the sol-gel method. The phase structure and microstructure have been analyzed by X-ray diffraction and scanning electron microscope. The nonlinear characteristics and dielectric properties were tested by the V-I source and Agilent HP4294 A impedance analyzer. As a result,Zr gradient doping can significantly reduce the grain size of CCTO film,and also can increase its nonlinear coefficient. Compared with the downgraded thin film,the upgraded CaCu3Ti4-xO12 thin film shows much better properties,corresponding to the varistor voltage VT= 7. 44 V/mm,the leakage current IL= 102 μA,the nonlinear coefficient α =8. 3 and the lowest dielectric loss of 0. 029. Compositionally graded CaCu3Ti4-xO12 thin film is helpful for the development and application of capacitor-varistor bifunctional material.

关 键 词：组分梯度CaCu3Ti4-xZrxO12薄膜 溶胶-凝胶 压敏电压 非线性系数 

分 类 号：TN304.055[电子电信—物理电子学]