氦离子预注入对钨中氘滞留行为的影响  

Effect of Helium Ion Pre-implantation on Deuterium Retention Behavior in Tungsten

作　　者：金玉花[1] 贺冉 张学希 乔丽[2] 王鹏[2] Jin Yuhua;He Ran;Zhang Xuexi;Qiao Li;Wang Peng(State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metals,Lanzhou University of Technology,Lanzhou 730050,China;State Key Laboratory of Solid Lubrication,Lanzhou Institute of Chemical Physics,Chinese Academy of Sciences,Lanzhou 730000,China;Lanzhou University,Lanzhou 730000,China)

机构地区：[1]兰州理工大学省部共建有色金属先进加工与再利用国家重点实验室,甘肃兰州730050 [2]中国科学院兰州化学物理研究所固体润滑国家重点实验室,甘肃兰州730000 [3]兰州大学,甘肃兰州730000

出　　处：《稀有金属材料与工程》2020年第10期3498-3504,共7页Rare Metal Materials and Engineering

基　　金：国家重点研发计划(2017YFE0302500);国家自然科学基金面上项目(11875305)。

摘　　要：利用高能离子注入机和直线等离子体模拟装置将氦离子预注入钨中,再进行氘等离子体辐照。采用扫描镜(SEM)结合聚焦离子束(FIB)(SEM-FIB),透射电镜(TEM),辉光放电光谱仪(GD-OES)和热脱附谱(TDS)等分析方法,研究了高能氦离子预注入对氘等离子体再辐照后钨中氘滞留行为的影响。结果表明:氦离子预注入钨,在辐照损伤区域形成大量氦泡,钨经过氘等离子体再辐照后,表面的氘泡数量明显低于单独氘等离子体辐照的样品。从GD-OES分析中可以看到,在氦捕获位处氘滞留浓度明显升高,同时氦离子预注入增加了氘在钨中的扩散深度。结合TDS分析可知,氦离子预注入增加了氘在钨中的滞留总量,这是由于氦离子预注入后,形成的缺陷又为钨中氘的俘获提供大量新的位点,从而导致钨中的氘滞留量明显提高。High-energy helium ion pre-implantation in tungsten and deuterium plasma exposure were carried out by high-energy ion implanter and linear experimental plasma system(LEPS).SEM-FIB,TEM,GD-OES and TDS measurements were used to analyze the effect of helium ion pre-implantation on deuterium retention in tungsten from both microstructure and deuterium concentration depth profile.The results show that a large number of helium bubbles form in the irradiated area by implantation of helium ions.After deuterium plasma exposure,the number of deuterium bubbles is significantly lower than that of sample with alone deuterium plasma exposure.GD-OES analysis shows that deuterium concentration depth profile increases obviously at the helium capture position,and the helium ion pre-implantation increases the diffusion depth of deuterium in tungsten.TDS analysis also shows that helium ion pre-implantation increases the retention of deuterium in tungsten.This can be attributed to the defects formed after helium ions pre-implantation provide a large number of new trap sites for deuterium capture in tungsten,which leads to the significant increase of deuterium retention in tungsten.

关 键 词：钨 氦预注入 氘 GD-OES 滞留 

分 类 号：TG146.4+11[一般工业技术—材料科学与工程] TL341[金属学及工艺—金属材料]