氧含量对大气压等离子体薄膜沉积提高环氧树脂沿面耐压的影响  

Effect of Oxygen Concentration on Improvement of Surface Pressure Resistance of Epoxy Resin by Atmospheric Pressure Plasma Deposition

作　　者：王婷婷 章程[2,3] 张福增 马翊洋 罗兵 邵涛 WANG Tingting;ZHANG Cheng;ZHANG Fuzeng;MA Yiyang;LUO Bing;SHAO Tao(CSG Electric Power Research Institute Co.,Ltd.,Guangzhou 510080,China;Beijing International S&T Cooperation Base for Plasma Science and Energy Conversion,Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]南方电网科学研究院有限责任公司,广州510080 [2]中国科学院电工研究所等离子体科学和能源转化北京市国际科技合作基地,北京100190 [3]中国科学院大学,北京100049

出　　处：《高电压技术》2020年第10期3708-3714,共7页High Voltage Engineering

基　　金：国家自然科学基金(11575194);特高压工程技术(昆明、广州)国家工程实验室开放基金(NEL201703);电力系统国家重点实验室资助课题(SKLD19KM05)。

摘　　要：大气压等离子体改性可以有效提高环氧树脂(Al2O3-ER))表面沿面耐压特性。为了进一步提高放电均匀性和处理效果,研究了氧气(O2)对大气压等离子体射流薄膜沉积效果的影响。实验时氩气(Ar)作为载气,正硅酸四乙酯(TEOS)作为前驱气体。实验中保持通入射流管的Ar/TEOS混合气体含量不变,基底加热温度设为100℃,沉积3min,研究了氧含量对薄膜沉积的影响规律。实验结果表明Ar/TEOS混合气体中通入适量O2后,Al2O3-ER表面的Si—O—Si和Si—OH基团的吸收峰增强,Si元素和O元素的含量增加,这主要与Ar/O2反应中的潘宁电离增强、TEOS充分裂解有关。表面样貌观察结果表明不加氧时的表层出现与薄膜较为融合的纳米颗粒,添加0.8%O2后的表面呈现紧密的絮状结构。此外,表面电位分布测试表明添加1.6%O2后的峰值电位下降约50%,同时闪络电压平均值提高34.2%。实验结果为进一步优化薄膜沉积条件,提高Al2O3-ER沿面闪络性能研究提供了参考。Surface treatment of Al2O3-filled epoxy resin(Al2O3-ER)by atmospheric pressure plasma can effectively improve its surface insulating properties.In order to further improve the discharge uniformity and treatment effect,the effect of O2 on the film deposition of atmospheric pressure plasma jet was studied.In the experiments,the carrier gas was argon(Ar)and the precursor was tetraethyl orthosilicate(TEOS).The concentration of Ar/TEOS mixture gas was kept constant in the jet tube and the substrate heating temperature was set to 100℃.Deposition time was 3 minutes.Effect of the oxygen concentration on the film deposition was investigated.The experimental results show that the absorption peaks of Si—O—Si and Si—OH increase and the chemical concentrations of silicon and oxygen spices increase after a proper amount of oxygen is injected into Ar/TEOS mixture,and the reasons are that the Penning ionization in Ar/O2 mixture is enhanced and the TEOS is sufficiently dissociated.The observation of surface topography shows that nano-particles fused with the film after the deposition without oxygen appear on the Al2O3-ER surface.When O2 concentration is 0.8%,the Al2O3-ER surface presents a flocculent structure.Furthermore,surface potential distribution tests show that the peak potential will decrease by about 50%after 1.6%O2 addition,meanwhile,the average flashover voltages will increase by more than 34.2%.The experimental results provide references for further optimization of film deposition conditions and the study on the surface flashover improvement of Al2O3-ER sample.

关 键 词：等离子体 薄膜沉积 氧含量 潘宁电离 闪络电压 

分 类 号：TM216[一般工业技术—材料科学与工程]