基于全SiC功率器件的高密度电源设计  

High Density Power Supply Design Based on Full SiC Power Device

作　　者：张才清[1] 漆岳 熊才伟 ZHANG Caiqing;QI Yue;XIONG Caiwei(Nanjing Research Institute of Electronics Technology,Nangjing 210039,China)

机构地区：[1]南京电子技术研究所,南京210039

出　　处：《现代雷达》2020年第11期79-82,共4页Modern Radar

摘　　要：随着雷达有源阵面向轻薄化、小型化、高效率方向不断发展,作为雷达有源阵面关键部件之一的阵面电源,其效率、功率密度必须不断得到提升。文中介绍了一种基于全碳化硅(SiC)功率器件将高压直流输入变换为雷达阵面所需的低压直流电源的设计方法。此方法是利用SiC功率器件自身的优点,结合高压直流移相脉宽调制功率变换技术,来实现高压输入阵面电源的高功率密度及高效率。该设计已通过一台额定功率1.5 kW的电源样机得到了验证,目前已批量生产。With the continuous development of light-weight,miniaturization and high-efficiency for radar active array,as one of the key parts of radar active array,the efficiency and power density of array power supply need to be improved continuously.A design method which transfers high voltage direct current(DC)input to the low voltage DC needed by radar array based on full SiC powerdevices is introduced.This method uses the advantages of SiC power devices and combines with phase-shift pulse modulation powerconversion technology of high voltage DC to realize high power density and efficiency of high voltage input array power supply.Through a power supply prototype with rated power of 1.5 kW,this method has been verified and the current prototype has been mass-produced.

关 键 词：SIC器件 高压直流 高功率密度 高效率 

分 类 号：TN86[电子电信—信息与通信工程]