基于GMM逆效应压力传感器的结构设计与研究  

Structure design and research of pressure sensor based on GMM inverse effect

作　　者：崔路飞 王传礼[1] 喻曹丰 熊美俊 CUI Lufei;WANG Chuanli;YU Caofeng;XIONG Meijun(School of Mechanical Engineering,Anhui University of Science and Technology,Huainan 232001,China)

机构地区：[1]安徽理工大学机械工程学院,安徽淮南232001

出　　处：《现代电子技术》2020年第23期164-166,172,共4页Modern Electronics Technique

基　　金：国家自然科学基金项目资助(51675003);中国博士后科学基金资助项目(2019M652159)。

摘　　要：从传统压力传感器结构和超磁致伸缩材料逆效应原理入手,通过对闭合磁路和偏置磁场的研究,设计出一种新型的超磁致伸缩压力传感器,通过结构内部的霍尔传感器测量磁通量实现静态力的测量。利用Comsol软件进行有限元仿真,重点研究闭合磁路对磁通量的影响以及偏置磁场对传感器输出特性的影响规律。仿真结果表明:当采用闭合磁路装置时,能够对磁通进行引导,几乎没有漏磁通现象;存在一个最佳偏置电流(偏置磁场)使得传感器的灵敏度最高,求得灵敏度为0.44 mV/N。这为后面超磁致伸缩逆效应压力传感器的深入研究提供了一种技术途径。On the basis of the structure of traditional pressure sensor and the principle of inverse effect of GMM(giant magnetostrictive material),a new type of giant magnetostrictive pressure sensor is designed by studying the closed magnetic circuit and bias magnetic field.The static force can be measured by measuring the magnetic flux with Hall sensor inside the designed sensor.The finite element simulation is carried out by Comsol software,and the influence of closed magnetic circuit on magnetic flux and the influence of bias magnetic field on the output characteristics of the sensor are studied.The simulation results show that,when the closed magnetic circuit device is used,the magnetic flux can be guided and there is almost no leakage magnetic flux;the presence of an optimum bias current(bias magnetic field)maximizes the sensor′s sensitivity,which is 0.44 mV/N.It provides a technical approach for the further study of giant magnetostrictive inverse effect pressure sensor.

关 键 词：超磁致伸缩逆效应 闭合磁路 偏置磁场 超磁致伸缩压力传感器 有限元仿真 灵敏度 

分 类 号：TN602-34[电子电信—电路与系统] TN03