Sn doped ZnO thin films as high resistivity window layer for Cu(In,Ga)Se2 solar cells  

作　　者：LI Bo-yan LIU Fang-fang LIN Lie 李博研;刘芳芳;林列(Institute of Modern Optics,College of Electronic Information and Optical Engineering,Nankai University,Tianjin 300350,China;Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin Nankai University,Tianjin 300350,China;Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,Tianjin 300350,China)

机构地区：[1]Institute of Modern Optics,College of Electronic Information and Optical Engineering,Nankai University,Tianjin 300350,China [2]Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin Nankai University,Tianjin 300350,China [3]Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,Tianjin 300350,China

出　　处：《Optoelectronics Letters》2020年第6期451-454,共4页光电子快报（英文版）

摘　　要：For high efficiency Cu(In,Ga)Se2(CIGS) solar cell, the high-resistivity layer with high optical transmittance has to be adopted between the buffer layer and the high-conductivity window layer. In this paper, we propose Sn doped ZnO(ZTO) film, instead of the traditional intrinsic ZnO(i-ZnO) film, as an alternative n-type high-resistivity window layer for CIGS solar cell. In this experiment, both ZTO and i-ZnO films are strong(002) oriented, and the surface morphologies of the two films are almost the same. The statistical roughnesses of i-ZnO film and ZTO film are 0.58 nm and 0.63 nm, respectively. However, the optical transmittance of ZTO film is higher than that of i-ZnO film with the same thickness. The efficiency of ZTO based CIGS cell was 14.24%, which is almost the same as the efficiency of i-ZnO based CIGS cell. These results fully suggest that it is very feasible to replace i-ZnO with ZTO as the high resistant window layer.

关 键 词：CIGS RESISTIVITY LAYER 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TB383.2[一般工业技术—材料科学与工程]