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作 者:Wen-Yu Gu Guang-Yi Wang Yu-Jiao Dong Jia-Jie Ying 谷文玉;王光义;董玉姣;应佳捷(Institute of Modern Circuits and Intelligent Information,Hangzhou Dianzi University,Hangzhou 310018,China)
出 处:《Chinese Physics B》2020年第11期244-258,共15页中国物理B(英文版)
基 金:Project supported by the National Natural Science Foundation of China(Grant No.61771176)。
摘 要:Complexity and abundant dynamics may arise in locally-active systems only, in which locally-active elements are essential to amplify infinitesimal fluctuation signals and maintain oscillating. It has been recently found that some memristors may act as locally-active elements under suitable biasing. A number of important engineering applications would benefit from locally-active memristors. The aim of this paper is to show that locally-active memristor-based circuits can generate periodic and chaotic oscillations. To this end, we propose a non-volatile locally-active memristor, which has two asymptotically stable equilibrium points(or two non-volatile memristances) and globally-passive but locally-active characteristic. At an operating point in the locally-active region, a small-signal equivalent circuit is derived for describing the characteristics of the memristor near the operating point. By using the small-signal equivalent circuit, we show that the memristor possesses an edge of chaos in a voltage range, and that the memristor, when connected in series with an inductor,can oscillate about a locally-active operating point in the edge of chaos. And the oscillating frequency and the external inductance are determined by the small-signal admittance Y(iω). Furthermore, if the parasitic capacitor in parallel with the memristor is considered in the periodic oscillating circuit, the circuit generates chaotic oscillations.
关 键 词:MEMRISTOR chaos local activity Hopf bifurcation
分 类 号:TN60[电子电信—电路与系统]
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