Surface termination effects on the electrical characteristics of La2O3/Al2O3 nanolaminates deposited by atomic layer deposition  

作　　者：Ji-Bin Fan Shan-Ya Ling Hong-Xia Liu Li Duan Yan Zhang Ting-Ting Guo Xing Wei Qing He 樊继斌;凌山雅;刘红侠;段理;张研;郭婷婷;魏星;何清(School of Materials Science and Engineering,Chang’an University,Xi’an 710061,China;School of Microelectronics,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi’an 710071,China)

机构地区：[1]School of Materials Science and Engineering,Chang’an University,Xi’an 710061,China [2]School of Microelectronics,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi’an 710071,China

出　　处：《Chinese Physics B》2020年第11期503-507,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61604016 and 51802025);China Postdoctoral Science Foundation(Grant No.2017M613028);the Fundamental Research Funds for the Central Universities,China(Grant Nos.300102319209 and 300102310501);the Innovation,and Entrepreneurship Training Program for Undergraduates(Grant Nos.202010710231 and 201910710564).

摘　　要：Effects of initial surface termination on electrical characteristics of La2O3/Al2O3 nanolaminates deposited by atomic layer deposition are studied by conductive atomic force microscopy working in contact mode and standard electrical characterization methods.It is found that,compared with La2O3/Al2O3 nanolaminates with LaOx as termination,lower interface trap density,less current leakage spots,and higher breakdown voltage are obtained in the La2O3/Al2O3 nanolaminates with AlOx as termination after annealing.A clear promotion of interface silicate layer is observed for La2O3/Al2O3 nanolaminates with AlOx as termination compared with LaOx as termination under the same annealing condition.In addition,the current conduction mechanism in La2O3/Al2O3 nanolaminates is considered as the Poole-Frenkel conduction.All results indicate that the AlOx is a more appropriate termination to deposit La2O3/Al2O3 nanolaminates on Si substrate,which is useful for the high-κ process development.

关 键 词：La2O3/Al2O3 atomic layer deposition TERMINATION ANNEALING 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TN386[电子电信—物理电子学]