Properties of boron doped ZnO films prepared by reactive sputtering method: Application to amorphous silicon thin film solar cells  

作　　者：Sukanta Bose Sourav Mandal Asok K.Barua Sumita Mukhopadhyay 

机构地区：[1]Centre of Excellence for Green Energy and Sensor Systems,Indian Institute of Engineering Science and Technology,Shibpur,Howrah 711103,West Bengal,India [2]Centre for Energy Studies,Indian Institute of Technology Delhi,New Delhi 110016,India

出　　处：《Journal of Materials Science & Technology》2020年第20期136-143,共8页材料科学技术（英文版）

基　　金：The work has been supported by the Science and Engineering Research Board(SERB),Department of Science and Technology(SR/FTP/PS-175/2012)。

摘　　要：Reactive sputtered boron-doped zinc oxide(BZO) film was deposited from argon,hydrogen and boron gas mixture.The reactive sputtering technique provides us the flexibility of changing the boron concentration in the produced films by using the same intrinsic zinc oxide target.Textured surface was obtained in the as-deposited films.The surface morphology and the opto-electronic properties of the films can be controlled by simply varying the gas concentration ratio.By varying the gas concentration ratio,the best obtained resistivity ~6.51×10^-4Ω-cm,mobility ~19.05 cm^2 V^-1 s^-1 and sheet resistance ~7.23Ω/□ were obtained.At lower wavelength of light,the response of the deposited films improves with the increase of boron in the gas mixture and the overall transmission in the wavelength region 350-1100 nm of all the films are>85 %.We also fabricated amorphous silicon(a-Si) thin film solar cell on the best obtained BZO layers.The overall efficiency of the a-Si solar cell is 8.14 %,found on optimized BZO layer.

关 键 词：Magnetron reactive sputtering BZO Amorphous silicon Solar cells Zinc oxide(ZnO) 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TM914.42[电气工程—电力电子与电力传动]