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作 者:Jing Ning Maoyang Xia Dong Wang Xin Feng Hong Zhou Jincheng Zhang Yue Hao
机构地区:[1]The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,Xidian University,Xi’an 710071,People’s Republic of China [2]Shaanxi Joint Key Laboratory of Graphene,Xidian University,Xi’an 710071,People’s Republic of China
出 处:《Nano-Micro Letters》2021年第1期15-28,共14页纳微快报(英文版)
基 金:the Natural Science Basic Research Plan in Shaanxi Province of China(Program Nos.2019ZDLGY16-02,2019ZDLGY16-03,and 2019ZDLGY16-08);Youth Science and Technology Nova Program of Shaanxi Province(2020KJXX-068);the Wuhu and Xidian University special fund for industry-university-research cooperation(Program No.HX01201909039).
摘 要:Recent developments in the synthesis of graphene-based structures focus on continuous improvement of porous nanostructures,doping of thin films,and mechanisms for the construction of threedimensional architectures.Herein,we synthesize creeper-like Ni3Si2/NiOOH/graphene nanostructures via low-pressure all-solid meltingreconstruction chemical vapor deposition.In a carbon-rich atmosphere,high-energy atoms bombard the Ni and Si surface,and reduce the free energy in the thermodynamic equilibrium of solid Ni–Si particles,considerably catalyzing the growth of Ni–Si nanocrystals.By controlling the carbon source content,a Ni3Si2 single crystal with high crystallinity and good homogeneity is stably synthesized.Electrochemical measurements indicate that the nanostructures exhibit an ultrahigh specific capacity of 835.3 C g^−1(1193.28 F g^−1)at 1 A g^−1;when integrated as an all-solidstate supercapacitor,it provides a remarkable energy density as high as 25.9 Wh kg^−1 at 750 W kg^−1,which can be attributed to the freestanding Ni3Si2/graphene skeleton providing a large specific area and NiOOH inhibits insulation on the electrode surface in an alkaline solution,thereby accelerating the electron exchange rate.The growth of the high-performance composite nanostructure is simple and controllable,enabling the large-scale production and application of microenergy storage devices.
关 键 词:Pseudocapacitive storage Creeper-like Ni3Si2 NIOOH GRAPHENE All-solid-state supercapacitors
分 类 号:TM53[电气工程—电器] TB383.1[一般工业技术—材料科学与工程]
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