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作 者:王浩冰 陶金 吕金光[1] 孟德佳 李阳 赵永周 王家先 张军[3] 秦余欣[1] 王惟彪[1] 梁静秋[1] WANG Hao-bing;TAO Jin;LV Jin-guang;MENG De-jia;LI Yang;ZHAO Yong-zhou;WANG Jia-xian;ZHANG Jun;QIN Yu-xin;WANG Wei-biao;LIANG Jing-qiu(State Key Laboratory of Applied Optics,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China;University of Chinese Academy of Sciences,Beijing 100049,China;Guangzhou Key Laboratory of Visible Light Communication Engineering Technology,Jinan University,Guangzhou 510632,China)
机构地区:[1]中国科学院长春光学精密机械与物理研究所,应用光学国家重点实验室,长春130033 [2]中国科学院大学,北京100049 [3]暨南大学,广州市可见光通信工程技术重点实验室,广州510632
出 处:《中国光学》2020年第6期1362-1384,共23页Chinese Optics
基 金:国家重点研发计划(批准号:2018YFB1801900)资助的课题;广东省科技计划项目(批准号:2016B010111003)资助的课题;吉林省科技发展计划项目(批准号:20180801024GX和20190302062GX)资助的课题;中国科学院青年创新促进会基金(批准号:2018254);应用光学国家重点实验室2019年度开放基金(SKLAO:201908)。
摘 要:为增强硅的蓝光吸收,在硅表面设计银纳米颗粒阵列,基于局域表面等离激元共振效应对增强的硅蓝光吸收特性进行了分析研究。采用有限时域差分法计算银纳米颗粒阵列/硅复合结构中硅的蓝光吸收特性。结果表明:金属颗粒的消光能力与其几何参数有关,改变银纳米颗粒阵列的半径r、高度H与周期P可调控局域表面等离激元共振强度与共振频率,当银纳米颗粒阵列参数设定为:r=18.5 nm、H=45 nm、P=49 nm时,在共振吸收波长为465 nm的情况下,硅的蓝光吸收率由59%增加至94%,光吸收增益为0.57,光生载流子数目增益为0.53,分析认为是局域表面等离激元共振增强硅在蓝光波段的光吸收导致上述增益现象。本文的研究结果对了解局域表面等离激元效应,改善硅的蓝光吸收特性,设计和制备高蓝光响应度硅基可见光光电探测器具有重要的参考价值。To enhance the blue light absorption of silicon,an array of silver nanoparticles(Ag-NPs)was designed so that they create Localized Surface Plasmon Resonance(LSPR)near the surface of silicon(Si).The properties of the enhanced optical absorption of silicon in the blue band were then observed and researched.The blue-light absorption characteristic of silicon in the Ag-NPs/Silicon composite structure were calculated using the Finite-Difference-Time-Domain(FDTD)method.The results indicated that the metallic nanoparticles'extinction capability was related to its geometric parameters and the resonance intensity and peak wavelength can be tuned according to different geometric parameters of Ag-NPs including radius,height and period.At a resonance peak wavelength of 465 nm,the optical absorption of Si in the composite structure(Ag-NPs/Si)rises from 59%to 94%with an array of radius r=18.5 nm,a height H=45.0 nm and a period P=49.0 nm.It concluded that the light absorption gain was 0.57 and photogenerated carriers had a gain factor of 0.53 due to the enhanced light absorption of Si via LSPR in blue band.The results provide a significant reference for the enhancement of the blue-light absorption properties in silicon based on the LSPR effect and the design of a silicon-photodetector with a visible wide spectral resoponse.
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