大功率压接型IGBT器件中的机械应力研究  

Mechanical Stress Analysis in High Power Press Pack IGBT

作　　者：唐新灵 林仲康 张西子 燕树民 苏冰 王亮 韩荣刚 石浩 TANG Xinling;LIN Zhongkang;ZHANG Xizi;YAN Shumin;SU Bing;WANG Liang;HAN Ronggang;SHI Hao(State Key Laboratory of Advanced Power Transmission Technology(Global Energy Interconnection Research Institute Co.,Ltd.),Beijing 102209,China;Dezhou Electric Power Supply Company,State Grid Shandong Electric Power Company,Dezhou 253000,China)

机构地区：[1]先进输电技术国家重点实验室(全球能源互联网研究院有限公司),北京102209 [2]国网山东省电力公司德州供电公司,山东德州253000

出　　处：《中国电力》2020年第12期62-74,共13页Electric Power

基　　金：国家电网公司科技项目(高加速应力条件下Si基芯片终端结构及其封装结构对器件耐压可靠性的影响机制,5455GB190009)。

摘　　要：机械应力是影响高压大功率压接型IGBT器件电气特性、热特性以及可靠性的关键因素之一。首先,从芯片与封装结构设计的角度,介绍单芯片以及多芯片并联机械压力分布均衡特性的研究现状及其关键设计技术。其次,从封装工艺的角度,分别对比弹性压接、刚性压接等不同焊接形式对芯片机械应力分布的影响规律。最后,结合压接封装结构特点,基于一种新型芯片终端结构,提出一种新型封装技术方案,可以有效提升单芯片以及并联芯片压力的均衡特性,为高压大容量压接型IGBT器件的设计提供参考依据。Mechanical stress is one of the key factors affecting the electrical characteristics, thermal characteristics and reliability of high-voltage high-power press-pack IGBT devices. First of all, in this paper, from the perspective of chip and package structure design, the research status and key design techniques of the uniformity of the mechanical pressure distribution of single-chip and parallel multi-chip are introduced. Secondly, from the perspective of packaging technology, the influence of compliant contact, rigid contact and different soldering forms on the mechanical stress distribution of the chips are compared. Finally, combined with the characteristics of the press-pack structure, and based on a new type of edge termination structure, a new packaging technology solution is proposed, which can effectively improve the uniformity of the pressure of single chips and parallel chips, so as to provide a reference for the design of high-voltage high-power press-pack IGBT devices.

关 键 词：IGBT 压接型IGBT 机械应力 双面终端 

分 类 号：TN322.8[电子电信—物理电子学]