Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors  

作　　者：Guoliang TIAN Jinshun BI Gaobo XU Kai XI Xueqin YANG Majumdar SANDIP Huaxiang YIN Qiuxia XU Wenwu WANG 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [2]School of Microelectronics,University of Chinese Academy of Sciences,Beijing 100049,China [3]Department of Physics,ICFAI School of Science,ICFAI University Tripura,Agartala 799210,India

出　　处：《Science China(Information Sciences)》2020年第12期274-276,共3页中国科学（信息科学）（英文版）

基　　金：supported in part by National Natural Science Foundation of China(Grant Nos.2019B010145001,616340084,61821091,61888102)。

摘　　要：Dear editor,Ferroelectric tunneling FETs(FeTFETs)are the increasingly significant research topics on novel low-power electronic devices[1,2],because ferroelectric materials’negative capacitance effect is helpful to boost the channel potential and increase the on-state current in TFETs.

关 键 词：TUNNELING FERROELECTRIC effect 

分 类 号：TN386[电子电信—物理电子学]