CVD在介电材料表面直接制备石墨烯进展  

Progress in Direct Preparation of Graphene on the Surface of Dielectric Substrate by CVD

作　　者：李伟[1] 刘林涛[2] 李争显 王彦峰[2] 刘家欢[1] 李龙博 Li Wei;Liu Lintao;Li Zhengxian;Wang Yanfeng;Liu Jiahuan;Li Longbo(Xi’an University of Architecture and Technology,Xi’an 710055,China;Northwest Institute for Nonferrous Metal Research,Xi’an 710016,China;Northeastern University,Shenyang 110004,China)

机构地区：[1]西安建筑科技大学,陕西西安710055 [2]西北有色金属研究院,陕西西安710016 [3]东北大学,辽宁沈阳110004

出　　处：《稀有金属材料与工程》2020年第11期3987-3997,共11页Rare Metal Materials and Engineering

基　　金：陕西省创新人才计划项目(2017CKT-06);科技部国际合作项目(2014DFR50450);陕西省自然科学基础研究计划(2019JQ-940);面向苛刻环境的材料制备与防护技术工业和信息化部重点实验室。

摘　　要：石墨烯是一种SP2碳杂化的二维平面材料,因其卓越的电学、机械、光学性能,在半导体、电子、光学、传感器等多领域具有巨大的应用潜力。虽然石墨烯可以通过直接从母材剥离或过渡金属上生长来制备,但不受控制的生产或额外的复杂转移过程对石墨烯膜层造成一定损伤,而在介电衬底上通过CVD法直接制备石墨烯成为一个有意义的研究方向。本文综述了国内外介电材料表面CVD法直接制备石墨烯研究进展,系统的介绍了介电材料表面直接制备石墨烯的主要方法,阐明生长过程中催化条件、生长参数是介电材料表面制备石墨烯的关键。此外,由于介电材料表面的弱催化作用,其表面直接制备石墨烯晶畴尺寸小,电性能较差,因此实现介电材料表面石墨烯高质量、可控制备是今后研究的方向。Graphene,a one-atom-thick layer of carbon with SP2 hybrid orbital bonding and two-dimensional structure material,has excellent electrical,mechanical,and optical properties.With its extraordinary structure and excellent properties,graphene has great application potential in many fields such as semiconductors,electronics,optics,and sensors.While graphene can be prepared by direct exfoliation from mother materials or growth on transition metals,the uncontrolled production or the additional complex transfer process has been challenging for graphene applications.Therefore the direct preparation of graphene on the dielectric substrate by CVD has become an interesting research direction.This paper reviews the research progress of direct preparation of graphene by CVD on dielectric substrates surface,systematically introduces the main methods of direct preparation of graphene on dielectric material surface,and expounds that the catalytic conditions and growth parameters during the growth process are the key to the preparation of grap hene on dielectric substrates.In addition,due to the weak catalysis on the surface of dielectric materials,the direct preparation of graphene on the surface has small domain size and poor electrical properties.Therefore,the realization of high quality and controllable preparation of graphene on the surface of dielectric materials is the future research direction.

关 键 词：石墨烯 介电材料 无金属催化 电性能 

分 类 号：O613.71[理学—无机化学]