In0.17Al0.83N/GaN IMPATT二极管的温度特性  

Temperature Characteristics of In0.17Al0.83N/GaN IMPATT Diodes

作　　者：李秀圣 曹连振[1] Li Xiusheng;Cao Lianzhen(School of Physics and Optoelectronic Engineering,Weifang University,Weifang 261061,China)

机构地区：[1]潍坊学院物理与光电工程学院,山东潍坊261061

出　　处：《半导体技术》2020年第12期936-942,共7页Semiconductor Technology

基　　金：国家自然科学基金资助项目(11404246);山东省重点研发计划资助项目(2019GGX101073)。

摘　　要：为研究碰撞电离雪崩渡越时间(IMPATT)二极管的温度特性,采用Sentaurus软件设计了晶格匹配的In0.17Al0.83N/GaN异质结IMPATT二极管二维结构,利用漂移-扩散模型研究了温度对二极管直流及高频特性的影响,并与GaN同质结IMPATT二极管的温度特性进行了比较。结果表明,温度升高时IMPATT二极管的击穿电压增大,使异质结和同质结IMPATT二极管的射频输出功率密度分别由300 K时的1.62 MW/cm2和1.24 MW/cm2增大至500 K时的1.79 MW/cm2和1.42 MW/cm2。温度升高时二极管雪崩区宽度增大,导致异质结和同质结IMPATT二极管的直流-射频转换效率分别由300 K时的15.4%和12.1%降低至500 K时的14.2%和10.7%。相比之下,In0.17Al0.83N/GaN异质结IMPATT二极管更适合高温工作,取得的研究数据可用于指导毫米波大功率InAlN/GaN异质结IMPATT二极管的设计。To investigate the temperature characteristics of the impact ionization avalanche transit time(IMPATT)diode,a two-dimensional structure based on lattice-matched In0.17Al0.83N/GaN heterojunction was designed by using Sentaurus software.The drift-diffusion model was used to study the influence of temperature on DC and high frequency characteristics of the diode.Then,the temperature characteristics of the heterojunction diode were compared with the GaN homostructure IMPATT diode.The simulation results indicate that the breakdown voltage of the IMPATT diode increases with the increase of temperature,which leads to the RF output power densities of the heterojunction and homostructure IMPATT diodes increase from 1.62 MW/cm2 and 1.24 MW/cm2 at 300 K to 1.79 MW/cm2 and 1.42 MW/cm2 at 500 K,respectively.The width of the avalanche region widens with the increase of temperature,which leads to the DC-to-RF conversion efficiencies of the heterojunction and homostructure IMPATT diodes decrease from 15.4%and 12.1%at 300 K to 14.2%and 10.7%at 500 K,respectively.In contrast,the lattice-matched In0.17Al0.83N/GaN heterojunction IMPATT diode is more suitable for high temperature work.The obtained research data can be used to guide the design of millimeter-wave high-power InAlN/GaN heterojunction-based IMPATT diode.

关 键 词：In0.17Al0.83N/GaN 二极管 异质结 碰撞电离雪崩渡越时间(IMPATT) 温度特性 

分 类 号：TN304.26[电子电信—物理电子学] TN313.4