国产GaAs微波单片集成电路的氢中毒效应  

Hydrogen Poisoning Effects in Domestic GaAs Monolithic Microwave Integrated Circuits

作　　者：丁有源 黄杰[3] 席善斌[3] Ding Youyuan;Huang Jie;Xi Shanbin(Military Representative Office in Shijiazhuang,Shijiazhuang 050002,China;College of Joint Logistic,National Defense University,Beijing 100032,China;The 13th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]石家庄军代表室,石家庄050002 [2]国防大学联合勤务学院,北京100032 [3]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2020年第12期976-981,共6页Semiconductor Technology

摘　　要：对基于GaAs异质结外延材料、0.15μm PHEMT工艺制造的国产低噪声放大器(LNA)和驱动放大器(DA)各3种型号的GaAs微波单片集成电路(MMIC)进行了温度为150℃、H2体积分数为2%、时间为100 h的氢气氛暴露试验。试验结果表明,低噪声放大器和驱动放大器对氢气氛较为敏感,试验后线性增益、1 dB压缩点输出功率和驱动电流均发生了不同程度的退化,表现出氢中毒效应。在试验过程中,一种型号的低噪声放大器的驱动电流表现出先小幅度波动后快速下降,最终稳定基本不再变化的趋势。对GaAs MMIC发生氢中毒的作用机理进行了详细地探讨和分析,认为H原子引起载流子浓度的减少和肖特基肖势垒高度的改变是导致参数退化的主要原因。最后,给出了几种降低电路因氢气氛暴露所引起的可靠性风险的方法。Hydrogen exposure test for two kinds of domestic GaAs monolithic microwave integrated circuits(MMICs)at 150℃for 100 h in 2%(volumn fraction)hydrogen forming gas ambient was carried out.The MMICs selected were three types in each of the low noise amplifiers(LNAs)and driver amplifiers(DAs)which were fabricated on GaAs heterostructure epitaxial material with 0.15μm PHEMT process.The test results show that both of the LNAs and DAs are sensitive to the hydrogen ambient exposure.Parameters of linear gain,output power at 1 dB compression point and driving current degrade to different degrees,showing hydrogen poisoning effects.During the test,the driving current of one type of LNA shows a slight fluctuation at the early stage,then decreases rapidly,and stabilizes to a certain value at last.Degradation mechanisms of hydrogen poisoning in GaAs MMICs are discussed and analyzed in detail,and the decrease of carrier concentration and the changing of Schottky barrier height caused by H atom are thought to be the main cause.Finally,approaches to reduce the reliability risk of circuits exposed in hydrogen ambient are proposed.

关 键 词：GaAs 微波单片集成电路(MMIC) 低噪声放大器(LNA) 驱动放大器(DA) 氢中毒 可靠性 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN406