AlGaN量子结构及其紫外光源应用  

AlGaN Quantum Structures and Application for Ultraviolet Emission Devices

作　　者：李金钗[1] 高娜[1] 林伟[1] 蔡端俊[1] 黄凯[1] 李书平[1] 康俊勇[1] LI Jinchai;GAO Na;LIN Wei;CAI Duanjun;HUANG Kai;LI Shuping;KANG Junyong(Fujian Key Laboratory of Semiconductor Materials and Applications,Collaborative Innovation,Center for Optoelectronic Semiconductors and Efficient Devices,Engineering Research Center of Micro-nano Optoelectronic Materials and Devices,Ministry of Education,Department of Physics,Xiamen University,Xiamen 361005,China)

机构地区：[1]厦门大学物理学系,微纳光电子材料与器件教育部工程研究中心,半导体光电材料及其高效转换器件协同创新中心,福建省半导体材料及应用重点实验室,厦门361005

出　　处：《人工晶体学报》2020年第11期2068-2078,共11页Journal of Synthetic Crystals

基　　金：国家重点研发计划(2016YFB0400101);国家自然科学基金(61874090);厦门市重大科技项目(3502Z20191016)。

摘　　要：AlGaN量子结构是实现高光效、高稳定紫外固态光源的核心。近年来,AlGaN半导体材料及其紫外光源应用研究取得了较大的进展。然而,AlGaN材料的生长制备只能在非平衡条件下完成,涉及的生长动力学问题十分复杂,制约了量子阱等结构品质的提高;材料带隙宽,p型掺杂难度大,激活效率低,限制了载流子注入;光学各向异性显著,不利于光从器件正面出射。因此,AlGaN基紫外、特别是深紫外波段器件性能还有待提高。本文梳理了AlGaN量子结构与紫外光源效率之间的关系,详细阐述和总结了有源区量子结构、p型掺杂量子结构以及光学各向异性调控等方面所面临的挑战及近年来的重要研究进展。AlGaN quantum structure is the core of realizing high light efficiency and high stability ultraviolet(UV)solid-state light source.In recent years,great progress has been made in AlGaN based semiconductor materials and UV emission devices.However,AlGaN materials can only be grown under non-equilibrium conditions.The growth kinetics involved is very complex,which restricts the improvement of the quality of quantum wells and other structures.Because of the wide band gap,the difficulty of p-type doping and the low activation efficiency,the carrier injection is limited.The optical anisotropy is obvious,which is not conducive to light emission from the front of the device.Therefore,the performance of AlGaN based UV devices,especially in deep UV band,needs to be improved.In this paper,the relationship between AlGaN quantum structures and the efficiency of UV emission devices are summarized,and the key scientific problems and research progress in active region quantum structures,p-type doping issue of AlGaN quantum structures and optical polarization control are reviewed.

关 键 词：ALGAN 量子结构 紫外光源 

分 类 号：O78[理学—晶体学] O471.1