SnSe热电半导体晶体生长技术创新进展  

Progress of Technological Innovation of SnSe Thermoelectric Semiconductor Crystal Growth

作　　者：白旭东 胡皓阳[3] 蒋俊[3] 李荣斌 申慧 徐家跃 金敏 BAI Xudong;HU Haoyang;JIANG Jun;LI Rongbin;SHEN Hui;XU Jiayue;JIN Min(School of Materials Science and Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China;College of Materials,Shanghai Dianji University,Shanghai 201306,China;Ningbo Institute of Industrial Technology,Chinese Academy of Sciences,Ningbo 315201,China;School of Materials Science and Engineering,Shanghai Institute of Technology,Shanghai 201418,China)

机构地区：[1]上海理工大学材料科学与工程学院,上海200093 [2]上海电机学院材料学院,上海201306 [3]中国科学院宁波材料技术与工程研究所,宁波315201 [4]上海应用技术大学材料科学与工程学院,上海201418

出　　处：《人工晶体学报》2020年第11期2153-2160,共8页Journal of Synthetic Crystals

基　　金：上海市自然科学基金(19ZR1419900)。

摘　　要：SnSe晶体是一种新型低成本环境友好型热电半导体材料,近几年已成为国内外研究的热点。为了获得SnSe晶体,目前国际上主要采用垂直布里奇曼法和垂直梯度凝固法两种技术进行生长。然而该材料因具有独特的层状结构和复杂热膨胀特征,其在晶体生长过程中极易发生解理开裂,导致难以获得大尺寸晶体。为了解决高完整SnSe晶体制备难题,本团队在材料体系相图及热重分析指导下,近年来先后开发出了气相法、水平熔体法以及水平液封法等多种晶体制备技术,均成功获得了较大尺寸的SnSe晶体材料。本论文从工艺原理、技术要点、晶体生长结果等多方面对相关技术创新情况予以介绍,并将它们的优缺点进行了对比。综合评价认为水平液封法在获取高完整SnSe晶体及性能调控方面具有显著优势,未来将逐渐成为一种广受欢迎的技术。SnSe crystal is a new type of low-cost and environment-friendly thermoelectric semiconductor material,which has become a hot spot around the world in recent years.In order to obtain SnSe crystal,vertical Bridgman method and vertical gradient frozen method are the two main techniques that are usually used at home and abroad.However,the unique layered structure and complex thermal expansion characteristics of SnSe crystal make it easy to cleave and crack in the process of crystal growth,therefore,the preparation of large size SnSe crystal has become a big matter up to today.In order to solve this problem,many novel crystal growth techniques were developed in our group under the guidance of phase diagram of material system and thermogravimetric analysis,such as gas phase method,horizontal Bridgman method and horizontal encapsulate method.Finally,large size SnSe single crystals were all successfully obtained by each method.In this paper,the process principle,technical points,crystal growth results of these technique innovations are introduced in detail,and their advantages and disadvantages are compared.It is considered that the horizontal encapsulate method has significant advantages for obtaining high integrity SnSe crystal and properties adjustment,and will gradually become a popular approach in the future.

关 键 词：SnSe晶体 半导体 热电 晶体生长 技术创新 

分 类 号：O734[理学—晶体学]