Distinct Three-Level Spin–Orbit Control Associated with Electrically Controlled Band Swapping  

作　　者：Yu Suo Hao Yang Jiyong Fu 索育;杨浩;付吉永(Department of Physics,Qufu Normal University,Qufu 273165,China;Department of Physics,Jining University,Qufu 273155,China;Instituto de Fı́sica,Universidade de Brası́lia,Brası́lia-DF 70919-970,Brazil;Collaborative Innovation Center of Light Manipulations and Applications,Shandong Normal University,Jinan 250358,China)

机构地区：[1]Department of Physics,Qufu Normal University,Qufu 273165,China [2]Department of Physics,Jining University,Qufu 273155,China [3]Instituto de Fı́sica,Universidade de Brası́lia,Brası́lia-DF 70919-970,Brazil [4]Collaborative Innovation Center of Light Manipulations and Applications,Shandong Normal University,Jinan 250358,China

出　　处：《Chinese Physics Letters》2020年第11期60-64,共5页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China(Grant Nos.11874236 and 11004120);the QFNU Research Fund;the Research Program of JNXY。

摘　　要：We investigate the Rashba and Dressehaus spin-orbit(SO)couplings in an ordinary GaAs/AlGaAs asymmetric double well,which favors the electron occupancy of three subbands v=1,2,3.Resorting to an external gate,which adjusts the electron occupancy and the well symmetry,we demonstrate distinct three-level SO control of both Rashba(αv)and Dresselhaus(βv)intraband terms.Remarkably,as the gate varies,the first-subband SO parametersα1 andβ1 comply with the usual linear behavior,whileα2(β2)andα3(β3)respectively for the second and third subbands interchange the values,triggered by a gate controlled band swapping.This provides a pathway towards fascinating selective SO control in spintronic applications.Moreover,we observe that the interband Rashba(ημv)and Dresselhaus(Lμv)terms also exhibit contrasting gate dependence.Our results should stimulate experiments probing SO couplings in multi-subband wells and adopting relevant SO features in future spintronic devices.

关 键 词：coupling ordinary SYMMETRY 

分 类 号：O469[理学—凝聚态物理]