硒碲掺杂对CoSb3基方钴矿热电性能的影响  

Influences of Se-/Te-doped on the thermoelectric properties of CoSb3-based skutterudites

作　　者：江孝武 雷鹰 高文圣 李雨 谷峻 郑睿 JIANG Xiaowu;LEI Ying;GAO Wensheng;LI Yu;GU Jun;ZHENG Rui(School of Metallurgical Engineering,Anhui University of Technology,Ma'anshan 243032,Anhui,China;Shandong Iron and Steel Group Rizhao Co.,Ltd.,Rizhao 730050,Shandong,China)

机构地区：[1]安徽工业大学冶金工程学院,安徽马鞍山243032 [2]山东钢铁集团日照有限公司,山东日照276800

出　　处：《金属功能材料》2020年第6期40-45,共6页Metallic Functional Materials

基　　金：国家自然科学基金项目(51974005,51574042)。

摘　　要：采用微波加热法快速合成结合放电等离子烧结技术制备Se/Te掺杂方钴矿热电材料,对其微观结构、物相组成、电性能、热性能等表征分析。XRD衍射分析表明,微波辐射时间5min可以合成高纯度的CoSb_3化合物;SEM微观结构分析表明,样品晶粒尺寸均在8~10μm范围内,且尺寸分布较均匀;电性能分析表明,掺杂样品为n型半导体,Te掺杂样品电导率高于Se掺杂和Se,Te双掺杂样品,Co_4Sb_(11.9)Te_(0.1)在548 K获得最高功率因子3001.3μW/K^2×m;热性能分析表明,晶格热导率对总热导率起主要贡献,Se,Te双掺杂样品晶格热导率小于Se掺杂和Te掺杂样品;CoSb_(11.8)Te_(0.1)Se_(0.1)在室温至773 K之间的晶格热导率为2.7~3.8 W·m^(-1)·K^(-1)。由于Te掺杂样品综合电性能远高于Se,Te双掺杂样品,因此Co_4Sb_(11.9)Te_(0.1)在673 K获得最高热电优值0.45。A series of Co4Sb12-x-yTexSey bulks were successful fabricated via microwave heating synthesis combined with spark plasma sintering,and their phase composition,microstructure and thermoelectric transport properties have been investigated.The analysis of XRD patterns showed that the diffraction peaks for all samples were matching to CoSb3 standard card.The analysis of SEM microstructure showed that average grain size for different samples were 8-10μm.The electrical transport properties analysis showed that the doped samples were n-type semiconductor,and the conductivity of Te-single doped sample was higher than that of Se-single and Se-,Te-double doped samples while that of Te double-doped sample,as result,Co4Sb11.9Te0.1 obtained the highest power factor of 3001.3μW/K2×m at 548 K.The thermal transport properties analysis showed that the lattice thermal conductivity played a major role in the total thermal conductivity.The lattice thermal conductivity of Se-,Te-double doped sample was smaller than that of Se-and Te-single doped samples.The lattice thermal conductivity of CoSb11.8Te0.1Se0.1 is 2.7-3.8 W·m-1·K-1.Because the comprehensive electrical performance of Te-single doped samples was much higher than the others,as results,Co4Sb11.9Te0.1 obtains the highest ZT of 0.45 at 673 K.

关 键 词：CoSb3基方钴矿 微波合成 掺杂 电输运性能 热输运性能 

分 类 号：TB34[一般工业技术—材料科学与工程]