基于共振拉曼光谱的ZnO薄膜载流子浓度提取  

Carrier Concentration Determination in ZnO Thin Film based on Resonant Raman Spectroscopy

作　　者：傅聪 潘新花 陈向阳 叶志镇[1] FU Cong;PAN Xinhua;CHEN Xiangyang;YE Zhizhen(School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China)

机构地区：[1]浙江大学材料科学与工程学院,浙江杭州310027

出　　处：《材料科学与工程学报》2020年第6期876-879,885,共5页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(51302244和91333203)

摘　　要：研究了共振拉曼散射在ZnO材料载流子浓度探测方面的应用。实验发现在可见光激发下,原有模型受限于激光穿透深度和耦合模强度,并不能很好的进行ZnO薄膜的载流子浓度探测,且在紫外光激发下,1LO模的移动规律出现异常。为此,研究分析了1LO过程的产生机制,并基于级联模型理论将其异常的移动行为归因子晶体缺陷。结合2LO过程不受晶体缺陷浓度影响的特点,研究建立起了运用2LO模分析ZnO载流子浓度的方法,并对各电子浓度的ZnO样品进行测试。拟合结果发现该方法在高载流子范围(>1019cm-3)与霍尔结果吻合较好。The application of resonant Raman spectroscopy in carrier concentration determination in ZnO was investigated in this paper.The restriction of visible excitation in this application was on penetration depth and coupled mode intensity.While under ultraviolet excitation,the abnormal behavior of 1LO modes was investigated and its origin was attributed to the defects in the crystal,which was explained in the cascade model.We substituted the 1LO-based method with the 2LO-based one and tested various ZnO samples under the new method.The fitting result shows that under resonant Raman conditions,carrier concentration obtained from Raman spectrum has great consistency with Hall results in high carrier concentration region.

关 键 词：ZNO 拉曼光谱 载流子浓度 

分 类 号：TN304.21[电子电信—物理电子学]