反应离子刻蚀法(RIE)制备的高效黑硅太阳能电池  

Preparation of High Efficiency Black Silicon Solar Cells by Reactive Ion Etching

作　　者：刘文峰 赵增超 周子游 黄海龙 蔡先武 LIU Wenfeng;ZHAO Zengchao;ZHOU Ziyou;HUANG Hailong;CAI Xianwu(Hunan Red Solar Photoelectricity Science and Technology Co.,Ltd.,Changsha 410205,China)

机构地区：[1]湖南红太阳光电科技有限公司,湖南长沙410205

出　　处：《材料科学与工程学报》2020年第6期880-885,共6页Journal of Materials Science and Engineering

基　　金：湖南省创新创业技术投资资助项目(2017GK5002)。

摘　　要：为强化硅片表面陷光能力,采用反应离子刻蚀法(RIE)制备具有纳米绒面的单晶和多晶黑硅太阳电池。采用RIE处理后,单晶硅片反射率从14.08%降低到5.78%,多晶硅片反射率从23.42%降低到8.90%,但低的反射率引起了较大的表面载流子复合。本研究通过表面结构修饰和热氧化钝化的方式大幅提升了少子寿命,单晶黑硅电池平均转换效率达到20.38%,多晶黑硅电池平均转换效率达到19.25%。由于金刚线切硅片无法沿用传统的酸制绒,采用RIE处理及工艺优化后,电池转换效率达到19.22%,对行业推广低成本的金刚线切硅片有重大意义。For improving the light trapping ability of silicon wafer surface, mono-crystalline (mono-) and multi-crystalline (mc-) black silicon solar cell with nano-textured surface were prepared by reactive ion etching (RIE). After RIE treatment, the reflectivity of mono-Si and mc-Si wafers decreased from 14.08% to 5.78% and 23.42% to 8.90%, respectively. However, the low reflectivity leads to large surface carrier recombination. In thiswork, the minority carrier lifetime was great improved by surface modification and thermal oxidation passivation, the average efficiency with 20.38% in mono-Si and 19.25% in mc-Si black silicon solar cells were obtained. Since diamond wire (DW)-sawn mc-Si wafers cannot be textured by traditional acid process, through RIE treatment and process optimization, the cell efficiency has reached 19.22%, which is of great significance for low cost DW-sawn mc-Si wafers in industrialization.

关 键 词：黑硅 太阳电池 反射率 金刚线切多晶硅片 

分 类 号：TM914.41[电气工程—电力电子与电力传动]