后摩尔时代的微电子研究前沿与发展趋势  

Frontiers and Trends of Microelectronics in Post Moore Era

作　　者：孙玲 黎明[2] 吴华强[3] 周鹏[4] 黄森[5] 张丽佳 潘庆[1] 李建军[1] 张兆田[1] Sun Ling;Li Ming;Wu Huaqiang;Zhou Peng;Huang Sen;Zhang Lijia;Pan Qing;Li Jianjun;Zhang Zhaotian(Department of Information Sciences,National Natural Science Foundation of China,Beijng,100085;Peking University,Beijing,100871;Tsinghua University,Beijing,100084;Fudan University,Shanghai,200433;Institute of Microelectronics,Chinese Academy of Sciences,Beijing,100029)

机构地区：[1]国家自然科学基金委员会信息科学部,北京100085 [2]北京大学,北京100871 [3]清华大学,北京100084 [4]复旦大学,上海200433 [5]中国科学院微电子研究所,北京100029

出　　处：《中国科学基金》2020年第5期652-659,共8页Bulletin of National Natural Science Foundation of China

基　　金：国家自然科学基金委员会政策局、工程与材料科学部对本次论坛的支持.

摘　　要：集成电路是信息社会的基石,当前集成电路的发展仅靠缩小器件尺寸已经难以为继,未来格局将由后摩尔时代新器件技术决定,其基础研究正面临着新材料、新结构、新原理等诸多挑战。基于国家自然科学基金委员会第231期双清论坛会议成果,本综述围绕超越摩尔定律微电子发展路径中的核心问题,总结了国内外集成电路领域近年来取得的主要研究进展,探讨了以能效、功耗、复杂度、容错度为牵引的后摩尔时代微电子前沿研究方向,分析了我国在该领域亟需关注和解决的重要基础科学问题。As the foundation stone of modern information society,the develpopment of integrated circuit nowadays is difficult to be continued only by reducing the device size but the new device technologies in post Moore era.Therefore,the fundamental research of integrated circuit is facing many new challenges,such as new materials,new structures and new principles.Focusing on the core issues of microelectronics development beyond Moore's Law such as energy efficiency,power consumption,complexity and fault tolerance,this review summarizes the recent main research progress in integrated circuit domestic and abroad,explores the frontier directions of microelectronics in post Moore era according to the discussion on the 231st Shuangqing forum of NSFC.Finally,the key scientific problems in this field are put forward,which should be paid close attention to and solved by Chinese researchers.

关 键 词：微电子 集成电路 摩尔定律 后摩尔 新器件 科学问题 

分 类 号：G322[文化科学]