Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO2/H2O technology  

作　　者：Meihua Liu Zhangwei Huang Kuan-Chang Chang Xinnan Lin Lei Li Yufeng Jin 刘美华;黄樟伟;张冠张;林信南;李蕾;金玉丰(School of Electronic and Computer Engineering,Peking University Shenzhen Graduate School,Shenzhen 518055,China)

机构地区：[1]School of Electronic and Computer Engineering,Peking University Shenzhen Graduate School,Shenzhen 518055,China

出　　处：《Chinese Physics B》2020年第12期419-423,共5页中国物理B（英文版）

基　　金：Project supported by Shenzhen Science and Technology Innovation Committee(Grant Nos.ZDSYS201802061805105,JCYJ20190808155007550,QJSCX20170728102129176,and JCYJ20170810163407761);the National Natural Science Foundation of China(Grant No.U1613215).

摘　　要：The impact of supercritical CO2/H2O technology on the threshold-voltage instability of AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors(MIS-HEMTs) is investigated. The MIS-HEMTs were placed in a supercritical fluid system chamber at 150℃ for 3 h. The chamber was injected with CO2 and H2O at pressure of 3000 psi(1 psi ≈ 6.895 kPa). Supercritical H2O fluid has the characteristics of liquid H2O and gaseous H2O at the same time, that is, high penetration and high solubility. In addition, OH-produced by ionization of H2O can fill the nitrogen vacancy near the Si3N4/GaN/AlGaN interface caused by high temperature process. After supercritical CO2/H2O treatment, the threshold voltage shift is reduced from 1 V to 0.3 V. The result shows that the threshold voltage shift of MIS-HEMTs could be suppressed by supercritical CO2/H2O treatment.

关 键 词：MIS-HEMTs threshold-voltage instability gate stress temperature influence 

分 类 号：TN386[电子电信—物理电子学]