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作 者:Quan-Zhen Sun Hong-Jie Jia Shu-Ying Cheng Hui Deng Qiong Yan Bi-Wen Duan Cai-Xia Zhang Qiao Zheng Zhi-Yuan Yang Yan-Hong Luo Qing-Bo Men Shu-Juan Huang 孙全震;贾宏杰;程树英;邓辉;严琼;段碧雯;张彩霞;郑巧;杨志远;罗艳红;孟庆波;黄淑娟(College of Physics and Information Engineering,Institute of Micro-Nano Devices and Solar Cells,Fuzhou University,Fuzhou 350108,China;Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering,Changzhou 213164,China;Key Laboratory of Green Perovskites Application of Fujian Province Universities,Fujian Jiangxia University,Fuzhou 350108,China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;Australian Centre for Advanced Photovoltaics,School of Photovoltaic and Renewable Energy Engineering,University of New South Wales,Sydney 2052,Australia)
机构地区:[1]College of Physics and Information Engineering,Institute of Micro-Nano Devices and Solar Cells,Fuzhou University,Fuzhou 350108,China [2]Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering,Changzhou 213164,China [3]Key Laboratory of Green Perovskites Application of Fujian Province Universities,Fujian Jiangxia University,Fuzhou 350108,China [4]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [5]Australian Centre for Advanced Photovoltaics,School of Photovoltaic and Renewable Energy Engineering,University of New South Wales,Sydney 2052,Australia
出 处:《Chinese Physics B》2020年第12期573-582,共10页中国物理B(英文版)
基 金:Project supported by the National Natural Science Foundation of China(Grant Nos.62074037,61574038,51961165108,and 51972332);the Natural Science Foundation of Fujian Province,China(Grant No.2017J01503);the Education and Scientific Research Project of Fujian Province,China(Grant No.JAT190010);the Open Project Program of the State Key Laboratory of Photocatalysis on Energy and Environment,China(Grant No.SKLPEE-202011);Fuzhou University,China。
摘 要:Flexible Cu2ZnSn(S,Se)4(CZTSSe)solar cells show great potential applications due to low-cost,nontoxicity,and stability.The device performances under an especial open circuit voltage(VOC)are limited by the defect recombination of CZTSSe/CdS heterojunction interface.We improve the deposition technique to obtain compact CdS layers without any pinholes for flexible CZTSSe solar cells on Mo foils.The efficiency of the device is improved from 5.7%to 6.86%by highquality junction interface.Furthermore,aiming at the S loss of CdS film,the S source concentration in deposition process is investigated to passivate the defects and improve the CdS film quality.The flexible Mo-foil-based CZTSSe solar cells are obtained to possess a 9.05%efficiency with a VOC of 0.44 V at an optimized S source concentration of 0.68 mol/L.Systematic physical measurements indicate that the S source control can effectively suppress the interface recombination and reduce the VOCdeficit.For the CZTSSe device bending characteristics,the device efficiency is almost constant after1000 bends,manifesting that the CZTSSe device has an excellent mechanical flexibility.The effective improvement strategy of CdS deposition is expected to provide a new perspective for promoting the conversion efficiency of CZTSSe solar cells.
关 键 词:flexible solar cells CdS deposition heterojunction interface defect passivation
分 类 号:TM914.4[电气工程—电力电子与电力传动]
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