Study on Electrical Properties of Graphene Field Effect Transistors Irradiated by Swift Heavy Ions  

快重离子辐照引起石墨烯场效应晶体管的电学性能变化研究

作　　者：Zeng Jian Liu Jie Zhang Shengxia Zhai Pengfei Yao Huijun Duan Jinglai 

机构地区：[1]不详

出　　处：《IMP & HIRFL Annual Report》2017年第1期108-108,共1页中国科学院近代物理研究所和兰州重离子研究装置年报（英文版）

基　　金：National Natural Science Foundation of China(11505243)。

摘　　要：Graphene is hailed as the“future material”and“revolutionary material”of the 21st century.It has broad application prospects in the field of emission materials,quantum computers and super-sensitive sensors.Because of the short channel effect and manufacturing cost constraints,the mainstream silicon base material has become the bottleneck of semiconductor development.Graphene is expected to be an alternative material for silicon,becoming an important role in the development of electronic devices in the post-moore law period.However,in irradiation environments,graphene lattice could be destroyed,which may induce the failure of graphene devices.Then the application of graphene devices in radiation environment is greatly limited.

关 键 词：destroyed ELECTRICAL BECOMING 

分 类 号：TB3[一般工业技术—材料科学与工程]