射频低噪声放大器的优化设计方法研究  

Research on Optimal Design Method of RF Low Noise Amplifier

作　　者：郭展[1] Guo Zhan(China airborne missile academy,Henan Luoyang 471000)

机构地区：[1]中国空空导弹研究院,河南洛阳471000

出　　处：《电子质量》2020年第12期56-60,77,共6页Electronics Quality

摘　　要：随着微波技术的进步,人们对雷达、通信系统的指标要求越来越高。低噪声放大器作为微波接收电路重要部件,其好坏决定了整个电子通信系统系统的灵敏度和噪声性能。微波单片集成电路凭借小巧紧凑、稳定性好、抗干扰能力强以及低功耗等优势成为首选;基于现有单片集成电路设计低噪声放大器的设计越来越多,更合适的电路优化方法也越来越重要。该文通过一个基于PHEMT晶体管ATF-36136的12GHz低噪声放大器的设计,对低噪声放大器优化设计方法进行了深入研究,尤其考虑了电路设计中工作温度变化、介电常数精度、电路板加工精度、PCB布局布线等因素在电路优化设计中的影响。With the progress of microwave technology,there are higher requirements for the indicators of radar and communication systems.As an important part of microwave receiving circuit,low noise amplifier(LNA)determines the sensitivity and noise performance of the entire electronic communication system.Microwave monolithic integrated circuits(MMIC)becomes the first choice due to its compactness,good stability,strong anti-interference ability and low power consumption.More and more designs of low noise amplifiers are based on existing MMIC,and more appropriate circuit optimization methods are also required now.A 12GHz low noise amplifier based on the PHEMT transistor ATF-36136 is designed and optimization design method is also studied,and the influence of factors such as operating temperature change,dielectric constant accuracy,circuit board processing accuracy,PCB layout and wiring in circuit design are especially considered.

关 键 词：射频低噪放 ADS仿真 介电常数精度 加工精度 优化设计 

分 类 号：TN722.3[电子电信—电路与系统]